Effect of Film Microstructure on Diffusion Barrier Properties of TaNx Films in Cu Metallization

被引：1

作者：

Kim, Sung-Man ^{[1
]}

Lee, Gi-Rak ^{[1
]}

Lee, Jung-Joong ^{[1
]}

机构：

[1] Seoul Natl Univ, Sch Mat Sci & Engn, Plasma Surface Engn Lab, Seoul 151742, South Korea

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2008年 / 47卷 / 08期

关键词：

tantalum nitride (TaNx); inductively coupled plasma (ICP); diffusion barrier; amorphous; microstructure;

D O I：

10.1143/JJAP.47.6953

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

TaNx thin films were deposited on Si substrates by inductively coupled plasma (ICP)-assisted DC magnetron sputtering. The diffusion barrier properties of the TaNx Films were tested by heat treatment at different temperatures. It was found that the diffusion barrier properties of TaNx thin films could be significantly enhanced by controlling the microstructure of the film. Diffusion barrier properties were improved by depositing the TaNx films under conditions that produce amorphous films without grain boundaries. as grain boundaries may serve as diffusion paths for Cu atoms. The diffusion barrier properties of the TaNx films with an amorphous structure were found to be maintained after annealing at 1073 K, which is the highest temperature among the reported values.

引用

页码：6953 / 6955

页数：3

共 10 条

[1] Ellfect of crystallinity and preferred orientation of Ta2N films on diffusion barrier properties for copper metallization [J].

Chung, HC ;

Liu, CP .

SURFACE & COATINGS TECHNOLOGY, 2006, 200 (10) :3122-3126

[2]

Kim J.M., UNPUB

[3] Thermal stability of tantalum nitride diffusion barriers for Cu metallization formed using plasma immersion ion implantation [J].

Kumar, M ;

Rajkumar ;

Kumar, D ;

Paul, AK .

MICROELECTRONIC ENGINEERING, 2005, 82 (01) :53-59

[4] Failure mechanism of Ta diffusion barrier between Cu and Si [J].

Laurila, T ;

Zeng, KJ ;

Kivilahti, JK ;

Molarius, J ;

Suni, I .

JOURNAL OF APPLIED PHYSICS, 2000, 88 (06) :3377-3384

[5] Tantalum carbide and nitride diffusion barriers for Cu metallisation [J].

Laurila, T ;

Zeng, K ;

Kivilahti, JK ;

Molarius, J ;

Riekkinen, T ;

Suni, I .

MICROELECTRONIC ENGINEERING, 2002, 60 (1-2) :71-80

[6] Application of inductively coupled plasma to CVD and PVD [J].

Lee, JJ .

SURFACE & COATINGS TECHNOLOGY, 2005, 200 (1-4) :31-34

[7] Growth of tantalum nitride films on Si by radio frequency reactive sputtering:: Effect of N2/Ar flow ratio [J].

Lin, JC ;

Chen, G ;

Lee, C .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1999, 146 (05) :1835-1839

[8] Growth of tantalum nitride films on Si by radio frequency reactive sputtering of Ta in N2/Ar gas mixtures:: Effect of bias [J].

Lin, JC ;

Lee, C .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2000, 147 (02) :713-718

[9] AUGER-ELECTRON SPECTROSCOPY STUDY ON THE STABILITY AND THE INTERFACIAL REACTION OF TA, TA-N AND TAN FILMS AS A DIFFUSION BARRIER BETWEEN CU9AL4 FILM AND SI [J].

NOYA, A ;

SASAKI, K ;

TAKEYAMA, M .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1993, 32 (02) :911-915

[10] Barrier capability of TaNx films deposited by different nitrogen flow rate against Cu diffusion in Cu/TaNx/n+-p junction diodes [J].

Yang, WL ;

Wu, WF ;

Liu, DG ;

Wu, CC ;

Ou, KL .

SOLID-STATE ELECTRONICS, 2001, 45 (01) :149-158

← 1 →