Silicon Piezoresistive Stress Sensors and Their Application in Electronic Packaging

被引:257
作者
Suhling, Jeffrey C. [1 ]
Jaeger, Richard C. [2 ]
机构
[1] Auburn Univ, Dept Mech Engn, Auburn, AL 36849 USA
[2] Auburn Univ, Dept Elect & Comp Engn, Auburn, AL 36849 USA
关键词
Electronic packaging; piezoresistive; stress sensor; test chip;
D O I
10.1109/JSEN.2001.923584
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Structural reliability of integrated circuit (IC) chips in electronic packages continues to be a major concern due to ever-increasing die size, circuit densities, power dissipation, operating temperatures, and the use of a wide range of low-cost packaging materials. A powerful method for experimental evaluation of silicon die stress distributions is the use of test chips incorporating integral piezoresistive sensors. In this paper, a review is made of the state-of-the-art in the area of silicon piezoresistive stress sensor test chips. Developments in sensor theory, calibration methods, and packaging applications are presented. In the absence of die failure, packaging-induced stresses result in changes in the parametric performance of circuitry on the die, and the theory discussed here can be used to predict such changes.
引用
收藏
页码:14 / 30
页数:17
相关论文
共 51 条
[1]   Stress-induced parametric shift in plastic packaged devices [J].
Ali, H .
IEEE TRANSACTIONS ON COMPONENTS PACKAGING AND MANUFACTURING TECHNOLOGY PART B-ADVANCED PACKAGING, 1997, 20 (04) :458-462
[2]  
[Anonymous], P S APPL EXP MECH EL
[3]  
Bastos J, 1996, ICMTS 1996 - 1996 IEEE INTERNATIONAL CONFERENCE ON MICROELECTRONIC TEST STRUCTURES, PROCEEDINGS, P27, DOI 10.1109/ICMTS.1996.535617
[4]   EVALUATION OF PIEZORESISTIVE COEFFICIENT VARIATION IN SILICON STRESS SENSORS USING A 4-POINT BENDING TEST FIXTURE [J].
BEATY, RE ;
JAEGER, RC ;
SUHLING, JC ;
JOHNSON, RW ;
BUTLER, RD .
IEEE TRANSACTIONS ON COMPONENTS HYBRIDS AND MANUFACTURING TECHNOLOGY, 1992, 15 (05) :904-914
[5]  
Bittle D. A., 1991, Transactions of the ASME. Journal of Electronic Packaging, V113, P203, DOI 10.1115/1.2905397
[6]  
Bradley A. T., IEEE T ADV PAC UNPUB
[7]   The effect of homogeneous mechanical stress on the electrical resistance of crystals [J].
Bridgman, PW .
PHYSICAL REVIEW, 1932, 42 (06) :0858-0863
[8]  
BRIDGMAN PW, 1951, P AM ACAD ARTS SCI, V79, P125
[9]   MOBILITY ANISOTROPY AND PIEZORESISTANCE IN SILICON P-TYPE INVERSION LAYERS [J].
COLMAN, D ;
BATE, RT ;
MIZE, JP .
JOURNAL OF APPLIED PHYSICS, 1968, 39 (04) :1923-&
[10]   HIGH SENSITIVITY SEMICONDUCTOR STRAIN SENSITIVE CIRCUIT [J].
DOREY, AP .
SOLID-STATE ELECTRONICS, 1975, 18 (04) :295-299