Structural and electronic properties of oligo- and polythiophenes modified by substituents

被引:44
作者
Rittmeyer, Simon P. [1 ]
Gross, Axel [1 ]
机构
[1] Univ Ulm, Inst Theoret Chem, D-89069 Ulm, Germany
来源
BEILSTEIN JOURNAL OF NANOTECHNOLOGY | 2012年 / 3卷
关键词
band gaps; conducting polymers; density functional theory calculations; molecular electronics; oligothiophenes; TOTAL-ENERGY CALCULATIONS; AB-INITIO; CONDUCTING POLYMERS; OLIGOTHIOPHENES; SEMICONDUCTORS; SOLITONS; METALS; GAPS;
D O I
10.3762/bjnano.3.101
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The electronic and structural properties of oligo- and polythiophenes that can be used as building blocks for molecular electronic devices have been studied by using periodic density functional theory calculations. We have in particular focused on the effect of substituents on the electronic structure of thiophenes. Whereas singly bonded substituents, such as methyl, amino or nitro groups, change the electronic properties of thiophene monomers and dimers, they hardly influence the band gap of polythiophene. In contrast, phenyl-substituted polythiophenes as well as vinyl-bridged polythiophene derivatives exhibit drastically modified band gaps. These effects cannot be explained by simple electron removal or addition, as calculations for charged polythiophenes demonstrate.
引用
收藏
页码:909 / 919
页数:11
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