Transport Properties of Graphene Nanoroads in Boron Nitride Sheets

被引：81

作者：

Jung, Jeil ^{[1
]}

Qiao, Zhenhua ^{[1
]}

Niu, Qian ^{[1
,2
]}

MacDonald, Allan H. ^{[1
]}

机构：

[1] Univ Texas Austin, Dept Phys, Austin, TX 78712 USA

[2] Peking Univ, Int Ctr Quantum Mat, Beijing 100871, Peoples R China

来源：

NANO LETTERS | 2012年 / 12卷 / 06期

基金：

美国国家科学基金会;

关键词：

h-boron nitride; graphene ribbon; 1D conducting state; kink state; ballistic transport; ZIGZAG; STATE; EDGES;

D O I：

10.1021/nl300610w

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We demonstrate that the one-dimensional (1D) transport channels that appear in the gap when graphene nanoroads are embedded in boron nitride (BN) sheets are more robust when they are inserted at AB/BA grain boundaries. Our conclusions are based on ab initio electronic structure calculations for a variety of different crystal orientations and bonding arrangements at the BN/C interfaces. This property is related to the valley Hall conductivity present in the BN band structure and to the topologically protected kink states that appear in continuum Dirac models with position-dependent masses.

引用

页码：2936 / 2940

页数：5

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