Optical properties of GaAsBi/GaAs quantum wells: Photoreflectance, photoluminescence and time-resolved photoluminescence study

被引：33

作者：

Kopaczek, J. ^{[1
]}

Linhart, W. M. ^{[1
]}

Baranowski, M. ^{[1
]}

Richards, R. D. ^{[2
]}

Bastiman, F. ^{[2
]}

David, J. P. R. ^{[2
]}

Kudrawiec, R. ^{[1
]}

机构：

[1] Wroclaw Univ Technol, Fac Fundamental Problems Technol, PL-50370 Wroclaw, Poland

[2] Univ Sheffield, Dept Elect & Elect Engn, Sheffield S1 3JD, S Yorkshire, England

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2015年 / 30卷 / 09期

关键词：

bismuth; photoreflectance; photoluminescence; dilute bismide; MOLECULAR-BEAM EPITAXY; CARRIER LOCALIZATION; GROWTH; ORIGIN; GAP;

D O I：

10.1088/0268-1242/30/9/094005

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Photoreflectance (PR), photoluminescence (PL) and time-resolved PL were applied to study the optical properties, particularly the localized and delocalized states and carrier dynamics, in GaAs1-xBix/GaAs quantum wells. With increasing Bi concentration the ground state transition (i.e., the transition between the first heavy hole and the first electron subband) red shifts due to Bi-related reduction of the GaAs1-xBix energy gap. Additionally, the transition related to the excited states in the quantum wells is clearly observed for the sample with high Bi concentration of 5.6%, confirming these quantum wells are type I. The PL measurements show the S-shape behavior and indicate the strong localization effect below 150 K for all measured samples, while the PL emission above 150 K is related to delocalized states. The localized character of emission at low temperatures is confirmed by time-resolved PL studies. At 10 K the decay time has strong spectral dispersion (i.e. the decay time increases from similar to 10 ns to similar to 400 ns going from the high to low energy side of the PL peak). This dispersion disappears above 190 K. At room temperature the decay time is in the order of a few ns.

引用

页数：7

共 32 条

[1] Valence-band anticrossing in mismatched III-V semiconductor alloys [J].

Alberi, K. ;

Wu, J. ;

Walukiewicz, W. ;

Yu, K. M. ;

Dubon, O. D. ;

Watkins, S. P. ;

Wang, C. X. ;

Liu, X. ;

Cho, Y. -J. ;

Furdyna, J. .

PHYSICAL REVIEW B, 2007, 75 (04)

[2] Temperature-dependent exciton luminescence in quantum wells by computer simulation [J].

Baranovskii, SD ;

Eichmann, R ;

Thomas, P .

PHYSICAL REVIEW B, 1998, 58 (19) :13081-13087

[3] Contactless electroreflectance, photoluminescence and time-resolved photoluminescence of GaInNAs quantum wells obtained by the MBE method with N-irradiation [J].

Baranowski, M. ;

Kudrawiec, R. ;

Syperek, M. ;

Misiewicz, J. ;

Zhao, H. ;

Sadeghi, M. ;

Wang, S. M. .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2011, 26 (04)

[4] The electronic band structure of GaBiAs/GaAs layers: Influence of strain and band anti-crossing [J].

Batool, Z. ;

Hild, K. ;

Hosea, T. J. C. ;

Lu, X. ;

Tiedje, T. ;

Sweeney, S. J. .

JOURNAL OF APPLIED PHYSICS, 2012, 111 (11)

[5] Surfactant effect of bismuth in atmospheric pressure MOVPE growth of InAs layers on (100) GaAs substrates [J].

Ben Naceur, H. ;

Mzoughi, T. ;

Moussa, I. ;

Nguyen, L. ;

Rebey, A. ;

El Jani, B. .

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2010, 43 (01) :106-110

[6] Mechanism for low-temperature photoluminescence in GaNAs/GaAs structures grown by molecular-beam epitaxy [J].

Buyanova, IA ;

Chen, WM ;

Pozina, G ;

Bergman, JP ;

Monemar, B ;

Xin, HP ;

Tu, CW .

APPLIED PHYSICS LETTERS, 1999, 75 (04) :501-503

[7] Highly strained 1.22-μm InGaAs lasers grown by MOVPE [J].

Chen, W. C. ;

Su, Y. K. ;

Chuang, R. W. ;

Yu, H. C. ;

Tsai, M. C. ;

Cheng, K. Y. ;

Horng, J. B. ;

Hu, C. ;

Tsau, Seth .

IEEE PHOTONICS TECHNOLOGY LETTERS, 2008, 20 (1-4) :264-266

[8] Origin of defect-insensitive emission probability in In-containing (Al, In, Ga) N alloy semiconductors [J].

Chichibu, Shigefusa F. ;

Uedono, Akira ;

Onuma, Takeyoshi ;

Haskell, Benjamin A. ;

Chakraborty, Arpan ;

Koyama, Takahiro ;

Fini, Paul T. ;

Keller, Stacia ;

Denbaars, Steven P. ;

Speck, James S. ;

Mishra, Umesh K. ;

Nakamura, Shuji ;

Yamaguchi, Shigeo ;

Kamiyama, Satoshi ;

Amano, Hiroshi ;

Akasaki, Isamu ;

Han, Jung ;

Sota, Takayuki .

NATURE MATERIALS, 2006, 5 (10) :810-816

[9] InGaN/GaN quantum wells grown by molecular-beam epitaxy emitting from blue to red at 300 K [J].

Damilano, B ;

Grandjean, N ;

Massies, J ;

Siozade, L ;

Leymarie, J .

APPLIED PHYSICS LETTERS, 2000, 77 (09) :1268-1270

[10] Giant spin-orbit bowing in GaAs1-xBix [J].

Fluegel, B. ;

Francoeur, S. ;

Mascarenhas, A. ;

Tixier, S. ;

Young, E. C. ;

Tiedje, T. .

PHYSICAL REVIEW LETTERS, 2006, 97 (06)

← 1 2 3 4 →