Preparation of thin Ga-doped ZnO layers for core-shell GaP/ZnO nanowires

被引：17

作者：

Novak, J. ^{[1
]}

Novotny, I. ^{[2
]}

Kovac, J. ^{[2
]}

Elias, P. ^{[1
]}

Hasenoehrl, S. ^{[1
]}

Krizanova, Z. ^{[1
]}

Vavra, I. ^{[1
]}

Stoklas, R. ^{[1
]}

机构：

[1] Slovak Acad Sci, Inst Elect Engn, Bratislava 84104, Slovakia

[2] Slovak Tech Univ Bratislava, Inst Microelect & Photon, Bratislava 81219, Slovakia

来源：

APPLIED SURFACE SCIENCE | 2012年 / 258卷 / 19期

关键词：

Core-shell nanowires; RF sputtering; Nanostructure; PULSED-LASER DEPOSITION; SOLAR-CELL APPLICATIONS; FILMS; GROWTH; PHOTOLUMINESCENCE;

D O I：

10.1016/j.apsusc.2012.04.100

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We studied the formation of a thin ZnO shell deposited by RF sputtering on GaP nanowires, which were grown on GaP(1 1 1) B substrates under vapour-liquid-solid mode by MOVPE. The ZnO layers had the nominal thickness between 10 and 120 nm (measured on planar GaP substrate). The SEM and TEM characterization showed that the ZnO shells fully covered the surface of the NWs from top to bottom. Moreover, a PN junction was created between the nanocrystalline wurtzite ZnO shell and the zinc-blende GaP NW core. The (n) ZnO/(p) GaP PN junction was characterized by I-V characteristics and spectral response measurement. The spectral response showed that the photocurrent was generated mostly the ZnO shell layer and marginally in the GaP material. (C) 2012 Elsevier B.V. All rights reserved.

引用

页码：7607 / 7611

页数：5

共 21 条

[1] Study of ZnO layers growth by pulsed laser deposition from Zn and ZnO targets [J].

Bruncko, Jaroslav ;

Vincze, Andrej ;

Netrvalova, Marie .

VACUUM, 2009, 84 (01) :162-165

[2] Electronic transport in ambipolar silicon nanowires [J].

Colli, A. ;

Pisana, S. ;

Fasoli, A. ;

Robertson, J. ;

Ferrari, A. C. .

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2007, 244 (11) :4161-4164

[3] Structural and optical properties of sputtered ZnO thin films [J].

Flickyngerova, S. ;

Shtereva, K. ;

Stenova, V. ;

Hasko, D. ;

Novotny, I. ;

Tvarozek, V. ;

Sutta, P. ;

Vavrinsky, E. .

APPLIED SURFACE SCIENCE, 2008, 254 (12) :3643-3647

[4] Progress and challenges for next-generation high-efficiency multijunction solar cells [J].

Friedman, D. J. .

CURRENT OPINION IN SOLID STATE & MATERIALS SCIENCE, 2010, 14 (06) :131-138

[5]

Hasenohrl S., 1999, P 14 EUR WORKSH MET, P259

[6] Influence of oxygen partial pressure on the structure and photoluminescence of direct current reactive magnetron sputtering ZnO thin films [J].

Hong, RJ ;

Qi, HJ ;

Huang, JB ;

He, GB ;

Fan, ZX ;

Shao, JA .

THIN SOLID FILMS, 2005, 473 (01) :58-62

[7] Structural and electrical characterization of intrinsic n-type In2O3 nanowires [J].

Jo, Gunho ;

Hong, Woong-Ki ;

Maeng, Jongsun ;

Kim, Tae-Wook ;

Wang, Gunuk ;

Yoon, Ahnsook ;

Kwon, Soon-Shin ;

Song, Sunghoon ;

Lee, Takhee .

COLLOIDS AND SURFACES A-PHYSICOCHEMICAL AND ENGINEERING ASPECTS, 2008, 313 (308-311) :308-311

[8] The structure of ⟨1 1 1⟩ B oriented GaP nanowires [J].

Johansson, Jonas ;

Karlsson, Lisa S. ;

Svensson, C. Patrik T. ;

Martensson, Thomas ;

Wacaser, Brent A. ;

Deppert, Knut ;

Samuelson, Lars .

JOURNAL OF CRYSTAL GROWTH, 2007, 298 (SPEC. ISS) :635-639

[9] Photoluminescence properties of high-quality ZnO thin films prepared by an RF-magnetron sputtering method [J].

Kim, D ;

Shimomura, T ;

Wakaiki, S ;

Terashita, T ;

Nakayama, M .

PHYSICA B-CONDENSED MATTER, 2006, 376 :741-744

[10] ZnO thin films prepared by atomic layer deposition and rf sputtering as an active layer for thin film transistor [J].

Lim, S. J. ;

Kwon, Soonju ;

Kim, H. .

THIN SOLID FILMS, 2008, 516 (07) :1523-1528

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