A Test Circuit for Extremely Low Gate Leakage Current Measurement of 10 aA for 80 000 MOSFETs in 80 s

被引：3

作者：

Inatsuka, Takuya ^{[1
]}

Kumagai, Yuki ^{[2
]}

Kuroda, Rihito ^{[1
]}

Teramoto, Akinobu ^{[3
]}

Suwa, Tomoyuki ^{[3
]}

Sugawa, Shigetoshi ^{[1
,3
]}

Ohmi, Tadahiro ^{[3
]}

机构：

[1] Tohoku Univ, Grad Sch Engn, Sendai, Miyagi 9808579, Japan

[2] LAPIS Semicond Miyagi Co Ltd, Ohira, Miyagi 9813693, Japan

[3] Tohoku Univ, New Ind Creat Hatchery Ctr, Sendai, Miyagi 9808579, Japan

来源：

IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING | 2013年 / 26卷 / 03期

关键词：

Electrical stress; gate leakage current; low current measurement; MOSFET; statistical evaluation; test circuit; STRESS-INDUCED LEAKAGE; FLASH MEMORY; SOFT BREAKDOWN; MODEL;

D O I：

10.1109/TSM.2013.2260568

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We discuss the measurement accuracy of the test circuit, which can evaluate statistical characteristics of gate leakage current of small area metal-oxide-semiconductor field-effect transistors (MOSFETs) in a very short time. The accuracy and precision of the gate leakage current obtained by the test circuit are verified for a wide range. As a result it is confirmed that very accurate gate current of 10(-17) A +/- 10% is able to be measured with this method. Using this test circuit, we can evaluate the gate leakage current at a wide electric field range, which is important in discussing the conduction mechanism of gate leakage current.

引用

页码：288 / 295

页数：8

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