Resonant-tunneling mixed-signal circuit technology

被引：27

作者：

Seabaugh, A ^{[1
]}

Brar, B ^{[1
]}

Broekaert, T ^{[1
]}

Morris, F ^{[1
]}

van der Wagt, P ^{[1
]}

Frazier, G ^{[1
]}

机构：

[1] Raytheon Syst Co, Dallas, TX 75266 USA

来源：

SOLID-STATE ELECTRONICS | 1999年 / 43卷 / 08期

关键词：

D O I：

10.1016/S0038-1101(99)00074-X

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A large-scale integration (LSI) InP-based technology is described for high-speed mixed-signal circuits. The monolithic 75-mm wafer process uses molecular beam epitaxy, Inf etch stop layers, an electron-beam-defined gate, cion-alloyed ohmic contacts, and 10 mask levels to provide resonant tunneling diodes (RTD's), 0.25- or 0.5-mu m gate-length high electron mobility transistors (HEMT's), Schottky diodes, resistors, capacitors and two and a half levels of interconnect. Resonant tunneling circuits described here for the first time include a 2.5-GHz, ten stage, tapped shift register, a 6.5-GHz clock generator and a multivalued-to-binary converter. (C) 1999 Elsevier Science Ltd. All rights reserved.

引用

页码：1355 / 1365

页数：11

共 16 条

[1]

Brar B, 1997, IEEE/CORNELL CONFERENCE ON ADVANCED CONCEPTS IN HIGH SPEED SEMICONDUCTOR DEVICES AND CIRCUITS, PROCEEDINGS, P28, DOI 10.1109/CORNEL.1997.649339

[2]

Broekaert TPE, 1997, IEEE/CORNELL CONFERENCE ON ADVANCED CONCEPTS IN HIGH SPEED SEMICONDUCTOR DEVICES AND CIRCUITS, PROCEEDINGS, P132, DOI 10.1109/CORNEL.1997.649351

[3] A monolithic 4-bit 2-Gsps resonant tunneling analog-to-digital converter [J].