Structural change of laser-irradiated Ge2Sb2Te5 films studied by electrical property measurement

被引：5

作者：

Sun Huajun ^{[1
]}

Hou Lisong ^{[1
]}

Wu Yiqun ^{[1
]}

Wei Jingsong ^{[1
]}

机构：

[1] Chinese Acad Sci, Shanghai Inst Opt & Fine Mech, Shanghai 201800, Peoples R China

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 2008年 / 354卷 / 52-54期

基金：

中国国家自然科学基金;

关键词：

Amorphous metals; metallic glasses; Alloys; Amorphous semiconductors; III-V Semiconductors; Crystallization; Glass ceramics; Conductivity; Films and coatings; Sputtering; Glass transition; Radiation effects; Laser-matter interactions; Microcrystallinity; Phases and equilibria; Structure; Long range order; Short-range order; Structural relaxation; X-ray diffraction;

D O I：

10.1016/j.jnoncrysol.2008.09.018

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Sheet resistance of laser-irradiated Ge2Sb2Te5 thin films prepared by magnetron sputtering was measured by the four-point probe method. With increasing laser power the sheet resistance undergoes an abrupt drop from 10(7) to 10(3) Omega/square at about 580 mW. The abrupt drop in resistance is due to the structural change from amorphous to crystalline state as revealed by X-ray diffraction (XRD) study of the samples around the abrupt change point. Crystallized dots were also formed in the amorphous Ge2Sb2Te5 films by focused short pulse laser-irradiated, the resistivities at the crystallized dots and the non-crystallized area are 3.375 x 10(-3) and 2.725 Omega m, sheet resistance is 3.37 x 10(4) and 2.725 x 10(7) Omega/square respectively, deduced from the I-V Curves that is obtained by conductive atomic force microscope (C-AFM). (C) 2008 Elsevier B.V. All rights reserved.

引用

页码：5563 / 5566

页数：4

共 11 条

[1] Initialization characteristics and their effects on the erasability of phase change optical disks using transmission electron microscopy [J].

Chen, HW ;

Hsieh, TE ;

Liu, JR ;

Shieh, HPD .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1999, 38 (3B) :1691-1697

[2] Crystallization behavior of sputter-deposited amorphous Ge2Sb2Te5 thin films [J].

Jeong, TH ;

Kim, MR ;

Seo, H ;

Kim, SJ ;

Kim, SY .

JOURNAL OF APPLIED PHYSICS, 1999, 86 (02) :774-778

[3]

Junji T, 1999, JPN J APPL PHYS, V38, pL322

[4] Crystallization behavior of as-deposited, melt quenched, and primed amorphous states of Ge2Sb2.3Te5 films [J].

Khulbe, PK ;

Wright, EM ;

Mansuripur, M .

JOURNAL OF APPLIED PHYSICS, 2000, 88 (07) :3926-3933

[5] Laser-induced changes on the complex refractive indices of phase-change thin film [J].

Liu, B ;

Ruan, H ;

Gan, F .

OPTICAL ENGINEERING, 2003, 42 (09) :2702-2706

[6] Electro-optical investigations of Ovonic chalcogenide memory devices [J].

Mytilineou, E. ;

Ovshinsky, S. R. ;

Pashmakov, B. ;

Strand, D. ;

Jablonski, D. .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 2006, 352 (9-20) :1991-1994

[7]

NORIKAZU O, 1996, J APPL PHYS, V79, P8357

[8] REVERSIBLE ELECTRICAL SWITCHING PHENOMENA IN DISORDERED STRUCTURES [J].

OVSHINSKY, SR .

PHYSICAL REVIEW LETTERS, 1968, 21 (20) :1450-+

[9]

Pauw L., 1958, Philips Res. Repts, V13, P1, DOI 10.1142/9789814503464_0017

[10] Atomic force microscopy study of laser induced phase transitions in Ge2Sb2Te5 [J].

Weidenhof, V ;

Friedrich, I ;

Ziegler, S ;

Wuttig, M .

JOURNAL OF APPLIED PHYSICS, 1999, 86 (10) :5879-5887

← 1 2 →