Effect of film roughness in MgO-based magnetic tunnel junctions

被引：68

作者：

Shen, WF ^{[1
]}

Mazumdar, D

Zou, XJ

Liu, XY

Schrag, BD

Xiao, G

机构：

[1] Brown Univ, Dept Phys, Providence, RI 02912 USA

[2] Micro Magnet Inc, Fall River, MA 02720 USA

来源：

APPLIED PHYSICS LETTERS | 2006年 / 88卷 / 18期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.2201547

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have systematically investigated the dependence of tunnel magnetoresistance in MgO-based magnetic tunnel junctions as a function of Ar pressure during sputtering. The MgO surface roughness, and therefore device magnetoresistance, depends strongly on Ar gas pressure. Magnetoresistance of up to 236% was achieved at room temperature after thermal annealing at 425 degrees C and with optimal sputtering conditions. The long mean free path of target atoms at low background pressures increases their kinetic energy at the substrate surface, resulting in smooth surface morphology and correspondingly improved device performance. (c) 2006 American Institute of Physics.

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页数：3

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