Improvement of the precision of lattice parameter determination by nano-beam electron diffraction

被引:10
作者
Saitoh, Koh [1 ]
Nakahara, Hirotaka [2 ]
Tanaka, Nobuo [1 ]
机构
[1] Nagoya Univ, EcoTopia Sci Inst, Nagoya, Aichi 4648601, Japan
[2] Nagoya Univ, Dept Crystalline Mat Sci, Nagoya, Aichi 4648601, Japan
关键词
nano-beam electron diffraction; lattice parameter determination; lattice strain; interface; semiconductor; HOLZ LINES; STRAIN; SUBSTRATE; FIELD;
D O I
10.1093/jmicro/dft023
中图分类号
TH742 [显微镜];
学科分类号
摘要
A highly precise determination of lattice parameters using higher-order Laue zone (HOLZ) reflections observed in nano-beam electron diffraction is presented. The introduction of more than 40 HOLZ reflections, whose positions are corrected by considering the aberration of the electron optics and are determined with an accuracy of 0.04 nm(-1), allows us to achieve a remarkable high precision of a 0.02% error, which is four times higher than the precision without HOLZ reflections.
引用
收藏
页码:533 / 539
页数:7
相关论文
共 19 条
  • [1] Local lattice parameter determination of a silicon (001) layer grown on a sapphire (1(1)over-bar-02) substrate using convergent-beam electron diffraction
    Akaogi, Takayuki
    Tsuda, Kenji
    Terauchi, Masami
    Tanaka, Michiyoshi
    [J]. JOURNAL OF ELECTRON MICROSCOPY, 2006, 55 (03): : 129 - 135
  • [2] [Anonymous], J MICROSC
  • [3] Electron diffraction with ten nanometer beam size for strain analysis of nanodevices
    Armigliato, A.
    Frabboni, S.
    Gazzadi, G. C.
    [J]. APPLIED PHYSICS LETTERS, 2008, 93 (16)
  • [4] Improved precision in strain measurement using nanobeam electron diffraction
    Beche, A.
    Rouviere, J. L.
    Clement, L.
    Hartmann, J. M.
    [J]. APPLIED PHYSICS LETTERS, 2009, 95 (12)
  • [5] On the origin of HOLZ lines splitting near interfaces: multislice simulation of CBED patterns
    Chuvilin, A
    Kaiser, U
    de Robillard, Q
    Engelmann, HJ
    [J]. JOURNAL OF ELECTRON MICROSCOPY, 2005, 54 (06): : 515 - 517
  • [6] Strain mapping for the semiconductor industry by dark-field electron holography and nanobeam electron diffraction with nm resolution
    Cooper, David
    Beche, Armand
    Hartmann, Jean Michel
    Carron, Veronique
    Rouviere, Jean-Luc
    [J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2010, 25 (09)
  • [7] Nanobeam Diffraction: Technique Evaluation and Strain Measurement on Complementary Metal Oxide Semiconductor Devices
    Favia, P.
    Gonzales, M. Bargallo
    Simoen, E.
    Verheyen, P.
    Klenov, D.
    Bender, H.
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2011, 158 (04) : H438 - H446
  • [8] Improving Accuracy and Precision of Strain Analysis by Energy-Filtered Nanobeam Electron Diffraction
    Haehnel, Angelika
    Reiche, Manfred
    Moutanabbir, Oussama
    Blumtritt, Horst
    Geisler, Holm
    Hoentschel, Jan
    Engelmann, Hans-Juergen
    [J]. MICROSCOPY AND MICROANALYSIS, 2012, 18 (01) : 229 - 240
  • [9] Hirsch P B., 1965, ELECT MICROSCOPY THI
  • [10] Quantitative analysis of HOLZ line splitting in CBED patterns of epitaxially strained layers
    Houdellier, F.
    Roucau, C.
    Clement, L.
    Rouviere, J. L.
    Casanove, M. J.
    [J]. ULTRAMICROSCOPY, 2006, 106 (10) : 951 - 959