High magnetic field;
Fe film;
Nanocrystalline;
Thermal evaporation;
Magnetic properties;
THIN-FILMS;
ELECTRICAL-PROPERTIES;
CRYSTAL ORIENTATION;
SURFACE-ROUGHNESS;
DEPOSITION;
IRON;
ELECTRODEPOSITION;
TEMPERATURES;
ANISOTROPY;
FUTURE;
D O I:
10.1016/j.vacuum.2015.07.021
中图分类号:
T [工业技术];
学科分类号:
08 ;
摘要:
In this study we have explored how a high magnetic field (HMF) affects the structure and magnetic properties of Fe thin films fabricated on Si (100) substrates at various substrate temperatures by using a thermal evaporation method. At a substrate temperature of room temperature (RT), the HMF increased the width of column and the formation energy of the films. This behavior occurred because the HMF induced an excess energy-Zeeman energy which is larger than the sum of the kinetic energy and thermal energy of Fe without the HMF. This increased the particle size and decreased the roughness of the film deposited at RT and 6 T. When the substrate temperature was increased to 400 degrees C, the growth mode is changed from columnar (RT) to layered (400 degrees C). The HMF increased the grain size. The film deposited at RT and 6 T had much improved soft magnetic properties from its modified microstructure. While thermal disturbances decreased the effect of HMF on the magnetic properties of the film deposited at 400 degrees C. In particular, the influence of HMF on the microstructure and magnetic properties of Fe films is significant not in the evaporation stage but in the condensation process of film. (C) 2015 Elsevier Ltd. All rights reserved.
机构:
Zhejiang Univ, Sch Mat Sci & Engn, State Key Lab Silicon & Adv Semicond Mat, Hangzhou 310027, Peoples R ChinaZhejiang Univ, Sch Mat Sci & Engn, State Key Lab Silicon & Adv Semicond Mat, Hangzhou 310027, Peoples R China
Yang, Ruihao
Guan, Weimian
论文数: 0引用数: 0
h-index: 0
机构:
Shenyang Aircraft Ind Grp Co Ltd, Shenyang 110850, Peoples R ChinaZhejiang Univ, Sch Mat Sci & Engn, State Key Lab Silicon & Adv Semicond Mat, Hangzhou 310027, Peoples R China
Guan, Weimian
Sun, Yue
论文数: 0引用数: 0
h-index: 0
机构:
Zhejiang Univ, Sch Mat Sci & Engn, State Key Lab Silicon & Adv Semicond Mat, Hangzhou 310027, Peoples R ChinaZhejiang Univ, Sch Mat Sci & Engn, State Key Lab Silicon & Adv Semicond Mat, Hangzhou 310027, Peoples R China
Sun, Yue
Cheng, Jiang
论文数: 0引用数: 0
h-index: 0
机构:
Jiangsu Zhongmei Cable Co Ltd, Yixing 214251, Peoples R ChinaZhejiang Univ, Sch Mat Sci & Engn, State Key Lab Silicon & Adv Semicond Mat, Hangzhou 310027, Peoples R China
Cheng, Jiang
Peng, Xiaoling
论文数: 0引用数: 0
h-index: 0
机构:
China Jiliang Univ, Coll Mat Sci & Chem, Hangzhou 310018, Peoples R ChinaZhejiang Univ, Sch Mat Sci & Engn, State Key Lab Silicon & Adv Semicond Mat, Hangzhou 310027, Peoples R China
Peng, Xiaoling
Liu, Jiabin
论文数: 0引用数: 0
h-index: 0
机构:
Zhejiang Univ, Sch Mat Sci & Engn, State Key Lab Silicon & Adv Semicond Mat, Hangzhou 310027, Peoples R ChinaZhejiang Univ, Sch Mat Sci & Engn, State Key Lab Silicon & Adv Semicond Mat, Hangzhou 310027, Peoples R China
机构:
Chungnam Natl Univ, Dept Nano Mat Engn, Daejeon 305764, South Korea
Univ Calif San Diego, Mat Sci & Engn, La Jolla, CA 92093 USA
Univ Calif San Diego, Mech & Aerosp Engn, La Jolla, CA 92093 USAChungnam Natl Univ, Dept Nano Mat Engn, Daejeon 305764, South Korea