Optical properties of SrTiO3 on silicon(100)

被引：10
作者：
Tian, Yao [1 ,2 ]
Adamo, Carolina [3 ]
Schlom, Darrell G. [3 ]
Burch, Kenneth S. [1 ,2 ]
机构：
[1] Univ Toronto, Dept Phys, Toronto, ON M5S 1A7, Canada
[2] Univ Toronto, Inst Opt Sci, Toronto, ON M5S 1A7, Canada
[3] Cornell Univ, Dept Mat Sci & Engn, Ithaca, NY 14853 USA
来源：
APPLIED PHYSICS LETTERS | 2013年 / 102卷 / 04期
基金：
加拿大自然科学与工程研究理事会;
关键词：
EPITAXIAL THIN-FILMS; ELECTRONIC-STRUCTURE; DOPED SRTIO3; STRAIN; SI; TEMPERATURE; TRANSITIONS; SPECTRA; BATIO3; BULK;
D O I：
10.1063/1.4789752
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Epitaxial buffer layers enable the many functionalities found in perovskites to be integrated with silicon. However, epitaxial growth of SrTiO3 on silicon is tricky and has so far only been achieved by molecular beam epitaxy. Nonetheless, previous investigations of these films were limited by the amorphous layer occurring at the interface. Through a combination of improved interface quality and an improved model, we report the optical properties of SrTiO3 films on Si(100) investigated by spectroscopic ellipsometry. We find that the data are best described by a model with two different SrTiO3 layers, potentially resulting from variations in the oxygen content. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4789752]
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页数：4
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