4x1-Si substrate atoms reconstruction in the Si(111)4x1-In structure

The room temperature interaction of atomic hydrogen with the Si(111)4 X 1-In surface phase was studied using low energy electron diffraction and Auger electron spectroscopy. It was found that the underlying atomic layer of a substrate of the Si(111)4 X 1-In surface phase has a reconstruction with the same periodicity as the In layer. Our experimental data evidently show that atomic hydrogen is a powerful tool for the investigation of the atomic structure of surface phases forming on the silicon surface.