High-efficiency regulated gate driver for power MOSFET

被引：1

作者：

Tzeng, Ren-Huei ^{[1
]}

Hung, Chia-Chien ^{[1
]}

Chen, Chem-Lin ^{[1
]}

机构：

[1] Natl Taiwan Univ, Grad Inst Elect Engn, Taipei 10617, Taiwan

来源：

APEC 2008: TWENTY-THIRD ANNUAL IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION, VOLS 1-4 | 2008年

关键词：

power MOSFET; gate driver; high frequency;

D O I：

10.1109/APEC.2008.4522785

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Driving power MOSFET at high switching frequency may induce significant power loss. A gate driver with energy saving function is proposed to meet the weight and volume issues of power SOC integration and can adjust the output gate,driving voltage for different applications. The proposed gate driver is completely designed on-chip and does not need extra off-chip components. The power dissipation of the proposed gate driver can he reduced by 64.2% at most from the experimental result.

引用

页码：621 / 626

页数：6