MD simulation of ion implantation damage in AlGaAs: II. Generation of point defects

被引：3
作者：
Gaertner, K. [1 ]
机构：
[1] Univ Jena, Inst Festkorperphys, D-07743 Jena, Germany
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2010年 / 268卷 / 02期
关键词：
Computer simulation; Radiation damage; Point defects; Formation rates; AlGaAs; ALXGA1-XAS; AMORPHIZATION; GAAS; DISPLACEMENT; HETEROSTRUCTURES; TRANSFORMATIONS; SEMICONDUCTORS; BUILDUP;
D O I：
10.1016/j.nimb.2009.09.023
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
Classical molecular dynamics computer simulations using a modified Tersoff potential are used to investigate the generation of point defects in Al(x)Ga(1-x)As crystals caused by Al, Ga and As recoils of energies in the range of 50-400 eV. The crystals are kept at room temperature and the composition x is varied between zero and one. The results for the numbers of the different vacancies, interstitials and antisites as functions of the recoil energy and the composition x are given as analytical expressions. In addition, the rates for the formation of the different antisites from the corresponding vacancies and interstitials and the recombination rates for Al, Ga and As are determined. For the generation of vacancies and interstitials (total numbers), the results confirm roughly the Kinchin-Pease formula, however, the factor deviates from 0.4 and it depends remarkably on the composition x. The results and the special role of the Al atoms are discussed. (C) 2009 Elsevier B.V. All rights reserved.
引用
收藏
页码：149 / 154
页数：6
相关论文
共 22 条
[1]   Light and heavy ion effects on damage clustering in GaAs quantum wells [J].
Bjorkas, C. ;
Nordlund, K. ;
Arstila, K. ;
Keinonen, J. ;
Dhaka, V. D. S. ;
Pessa, M. .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2007, 257 (324-327) :324-327
[2]   In situ RBS investigation of damage production during ion implantation in AlxGa1-xAs at 20 K [J].
Breeger, B ;
Wendler, E ;
Schubert, C ;
Wesch, W .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1999, 148 (1-4) :468-473
[3]   THE NATURE OF KEV AND MEV ION DAMAGE IN ALXGA1-XAS/GAAS AND ALAS/GAAS HETEROSTRUCTURES [J].
CULLIS, AG ;
POLMAN, A ;
SMITH, PW ;
JACOBSON, DC ;
POATE, JM ;
WHITEHOUSE, CR .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1992, 62 (04) :463-468
[4]   MD simulation of ion implantation damage in AlGaAs:: I.: Displacement energies [J].
Gaertner, K. .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2006, 252 (02) :190-196
[5]   THEORETICAL DESCRIPTION OF ELASTIC ATOM-ATOM SCATTERING [J].
GARTNER, K ;
HEHL, K .
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1979, 94 (01) :231-238
[6]  
JENCIC I, 1991, J APPL PHYS, V69, P1287, DOI 10.1063/1.347262
[7]   THE DISPLACEMENT OF ATOMS IN SOLIDS BY RADIATION [J].
KINCHIN, GH ;
PEASE, RS .
REPORTS ON PROGRESS IN PHYSICS, 1955, 18 :1-51
[8]   Ion implantation in AlxGa1-xAs:: Damage structures and amorphization mechanisms [J].
Lagow, BW ;
Turkot, BA ;
Robertson, IM ;
Coleman, JJ ;
Roh, SD ;
Forbes, DV ;
Rehn, LE ;
Baldo, PM .
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 1998, 4 (04) :606-618
[9]   Compositional variation of microstructure in ion-implanted AlxGa1-xAs [J].
Lagow, BW ;
Robertson, IM ;
Rehn, LE ;
Baldo, PM ;
Coleman, JJ ;
Yeoh, TS .
JOURNAL OF MATERIALS RESEARCH, 2000, 15 (09) :2043-2053
[10]   Molecular dynamics simulation of ion-beam-amorphization of Si, Ge and GaAs [J].
Nord, J ;
Nordlund, K ;
Keinonen, J .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2002, 193 :294-298
123