High-Yield Synthesis of Boron Nitride Nanosheets with Strong Ultraviolet Cathodoluminescence Emission

被引：168

作者：

Gao, Rui ^{[1
]}

Yin, Longwei ^{[1
]}

Wang, Chengxiang ^{[1
]}

Qi, Yongxin ^{[1
]}

Lun, Ning ^{[1
]}

Zhang, Luyuan ^{[1
]}

Liu, Yu-Xian ^{[1
]}

Kang, Le ^{[1
]}

Wang, Xianfen ^{[1
]}

机构：

[1] Shandong Univ, Minist Educ, Key Lab Liquid Struct & Hered Mat, Coll Mat Sci & Engn, Jinan 250061, Peoples R China

来源：

JOURNAL OF PHYSICAL CHEMISTRY C | 2009年 / 113卷 / 34期

关键词：

CARBON NANOTUBES; BN NANOTUBES; BAND-GAP; GROWTH; LUMINESCENCE; SPECTROSCOPY; PRECURSOR;

D O I：

10.1021/jp904246j

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Bulk quantities of hexagonal boron nitride (h-BN) nanosheets have been synthesized via a simple template- and catalyst-free chemical vapor deposition process at 1100-1300 degrees C, Adjusting the synthesis and chemical reaction parameters, the thickness of the BN nanosheets can be tuned in a range of 25-50 nm. Fourier transform infrared spectra and electron energy loss spectra reveal the typical nature of sp(2)-hybridization for the BN nanosheets. It shows an onset oxidation temperature of 850 degrees C for BN nanosheets compared with only about 400 degrees C for that of carbon nanotubes under the same conditions. It reveals a strong, and narrow cathodoluminescence emission in the ultraviolet range from the h-BN nanosheets, displaying strong ultraviolet lasing behavior. The fact that this luminescence response would be rather insensitive to size makes the BN nanosheets ideal candidates for lasing optical devices in the UV regime. The h-BN nanosheets are also better candidates for composite materials in high-temperature and hazardous environments.

引用

页码：15160 / 15165

页数：6

共 41 条

[1] Electron energy loss spectroscopy measurement of the optical gaps on individual boron nitride single-walled and multiwalled nanotubes -: art. no. 127601 [J].