Cavity origin and influence on reliability in lead zirconate titanate thin film capacitors

被引：4

作者：

Chentir, Mohamed-Tahar ^{[1
,2
]}

Ventura, Laurent ^{[1
]}

Bouyssou, Emilien ^{[2
]}

Anceau, Christine ^{[2
]}

机构：

[1] Univ Tours, Lab Microelect Puissance, F-37000 Indre Et Loire, France

[2] STMicroelectronics, F-37071 Tours 2, France

来源：

JOURNAL OF APPLIED PHYSICS | 2009年 / 106卷 / 05期

关键词：

crystal microstructure; dielectric devices; heat treatment; high-k dielectric thin films; lead compounds; reliability; thin film capacitors; voids (solid); zirconium compounds; PIEZOELECTRIC PROPERTIES;

D O I：

10.1063/1.3212985

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

This paper deals with the origin of void defects in lead zirconale titanate (PZT) microstructure, appearing after top electrode postdeposition heat treatment. The process conditions of void apparition are especially investigated, as well as the consequences of these defects on capacitor's electrical properties. We point out that structures presenting the biggest cavities exhibit the shortest time to breakdown (t(bd)). This result indicates that cavities might play an important role in PZT capacitor degradation mechanisms.

引用

页数：5

共 9 条

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