Transistor scaling with novel materials

被引：33
作者：
Ieong, Meikei [1 ]
Narayanan, Vijay [1 ]
Singh, Dinkar [1 ]
Topol, Anna [1 ]
Chan, Victor [1 ]
Ren, Zhibin [1 ]
机构：
[1] IBM Corp, TJ Watson Res Ctr, Yorktown Hts, NY 10598 USA
来源：
MATERIALS TODAY | 2006年 / 9卷 / 06期
关键词：
D O I：
10.1016/S1369-7021(06)71540-1
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Complementary metal-oxide-semiconductor (CMOS) transistor scaling will continue for at least another decade. However, innovation in transistor structures and integration of novel materials are needed to sustain this performance trend. Here we discuss the challenges and opportunities of transistor scaling for the next five to ten years.
引用
收藏
页码：26 / 31
页数：6
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