WDM multi-channel silicon photonic receiver with 320 Gbps data transmission capability

被引：99

作者：

Fang, Qing ^{[1
]}

Liow, Tsung-Yang ^{[1
]}

Song, Jun Feng ^{[1
,2
]}

Ang, Kah Wee ^{[1
]}

Bin Yu, Ming ^{[1
]}

Lo, Guo Qiang ^{[1
]}

Kwong, Dim-Lee ^{[1
]}

机构：

[1] ASTAR, Inst Microelect, Singapore 117685, Singapore

[2] Jilin Univ, State Key Lab Integrated Optoelect, Coll Elect Sci & Engn, Changchun 130023, Peoples R China

来源：

OPTICS EXPRESS | 2010年 / 18卷 / 05期

关键词：

I-N PHOTODETECTORS; WAVE-GUIDE; HIGH-PERFORMANCE; PHOTODIODE-ARRAY; GE; GERMANIUM; SI; INTEGRATION; MODEL;

D O I：

10.1364/OE.18.005106

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

A high performance monolithically integrated WDM receiver is fabricated on the SOI platform, with key components comprising a 1 x 32 Si-based AWG and an array of high speed waveguided Ge-on-Si photodetectors. The optical channel spacing is 200 GHz. This configuration was used to demonstrate 32-channel operation in the L-band, where it is particularly challenging for silicon photonics due to the low absorption coefficient of Ge at L-band wavelengths. Each channel is capable of operating at a data rate of at least 10 Gbps, resulting in an aggregate data rate of 320 Gbps. At a BER of 1 x 10(-11), the WDM receiver showed an optical input sensitivity between -16 dBm and -19 dBm. (C) 2010 Optical Society of America

引用

页码：5106 / 5113

页数：8

共 21 条

[1] High performance, waveguide integrated Ge photodetectors [J].