Thermoelectric performance of granular semiconductors

被引：16
|
作者：
Glatz, Andreas [1 ]
Beloborodov, I. S. [2 ]
机构：
[1] Argonne Natl Lab, Div Mat Sci, Argonne, IL 60439 USA
[2] Calif State Univ Northridge, Dept Phys & Astron, Northridge, CA 91330 USA
来源：
PHYSICAL REVIEW B | 2009年 / 80卷 / 24期
关键词：
grain size; granular materials; nanostructured materials; semiconductor doping; semiconductor materials; thermoelectric power; DISORDERED SEMICONDUCTORS; SYSTEMS; DEVICES; POWER;
D O I：
10.1103/PhysRevB.80.245440
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We study the effects of doping and confinement on the thermoelectric properties of nanocrystalline semiconductors. We calculate the thermopower and figure of merit for temperatures less than the charging energy. For weakly coupled semiconducting grains it is shown that the figure of merit is optimized for grain sizes of order 5 nm for typical materials, and that its value can be larger than one. Using the similarities between granular semiconductors and electron or Coulomb glasses allows for a quantitative description of inhomogeneous semiconducting thermoelectrics.
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页数：4
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