ESD On-Wafer Characterization: Is TLP Still the Right Measurement Tool?

被引：23

作者：

Scholz, Mirko ^{[1
,2
]}

Linten, Dimitri ^{[2
]}

Thijs, Steven ^{[2
,3
]}

Sangameswaran, Sandeep ^{[2
,3
]}

Sawada, Masanori ^{[4
]}

Nakaei, Toshiyuki ^{[4
]}

Hasebe, Takumi ^{[4
]}

Groeseneken, Guido ^{[2
,3
]}

机构：

[1] Vrije Univ Brussel, Dept ELEC, Fac Engn, B-1050 Brussels, Belgium

[2] IMEC VZW, B-3001 Louvain, Belgium

[3] Katholieke Univ Leuven, B-3000 Louvain, Belgium

[4] Hanwa Elect Ind Co Ltd, Wakayama 6496272, Japan

来源：

IEEE TRANSACTIONS ON INSTRUMENTATION AND MEASUREMENT | 2009年 / 58卷 / 10期

关键词：

Electrostatic discharges (ESDs); human body model (HBM); tester calibration; transient and waveforms; transmission line pulsing (TLP);

D O I：

10.1109/TIM.2009.2017657

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The electrical characterization of devices and circuits regarding their electrostatic discharge (ESD) robustness is done by using several measurement tools. Transmission line pulsing (TLP) and human body model (HBM) testing are the commonly used methods. In this paper, TLP and HBM on-wafer setups are presented regarding their electrical schematics, the type of data that is obtained, and the required calibration methodologies. By using three case studies, both test methods are compared by showing their advantages and disadvantages. It is demonstrated that pulsed measurement methods like TLP testing are not always a suitable tool to fully assess the ESD performance of devices or circuits.

引用

页码：3418 / 3426

页数：9

共 13 条

[1]

Grund E., 2007, ELECT OVERSTRESSELEC, P95

[2]

HALPERIN S, 1990, P EUROSTAT, P452

[3]

LINTEN D, 2008, P EOS ESD S, P204

[4]

Maloney T.J., 1985, Proc. EOS/ESD Symp, P49

[5]

Mergens M. P. J., 2003, IEEE International Electron Devices Meeting 2003, p21.3.1, DOI 10.1109/IEDM.2003.1269334

[6] Analysis of lateral DMOS power devices under ESD stress conditions [J].

Mergens, MPJ ;

Wilkening, W ;

Mettler, S ;

Wolf, H ;

Stricker, A ;

Fichtner, W .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2000, 47 (11) :2128-2137

[7]

NOTERMANS G, 1998, P EOS ESD S, P170

[8]

Sangameswaran S, 2008, ELECTRICAL OVERSTRESS/ELECTROSTATIC DISCHARGE SYMPOSIUM PROCEEDINGS - 2008, P249

[9] Faster ESD device characterization with wafer-level HBM [J].

Scholz, M. ;

Tremoullies, D. ;

Linten, D. ;

Rolain, Y. ;

Pintelon, R. ;

Sawada, M. ;

Nakaei, T. ;

Hasebe, T. ;

Groeseneken, G. .

2007 IEEE INTERNATIONAL CONFERENCE ON MICROELECTRONIC TEST STRUCTURES, PROCEEDINGS, 2007, :93-+

[10]

SCHOLZ M, 2007, P EOS ESD S, P89

← 1 2 →