Effect of Chelating Agent on the Galvanic Corrosion between Copper and Tantalum based Alkaline Polishing Surry

被引：2

作者：

Qi, Jiacheng ^{[1
,2
]}

Pan, Guofeng ^{[1
,2
]}

Wang, Chenwei ^{[1
,2
]}

Huang, Chao ^{[1
,2
]}

Hu, Lianjun ^{[1
,2
]}

机构：

[1] Hebei Univ Technol, Tianjin Key Lab Elect Mat & Devices, Tianjin 300130, Peoples R China

[2] Hebei Univ Technol, Sch Elect Informat Engn, Tianjin 300130, Peoples R China

来源：

2019 CHINA SEMICONDUCTOR TECHNOLOGY INTERNATIONAL CONFERENCE (CSTIC) | 2019年

关键词：

copper; tantalum; galvanic corrosion; CMP; chelating agent; PLANARIZATION; SLURRY;

D O I：

10.1109/cstic.2019.8755808

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Galvanic corrosion (gc) will be occurred at the interface of copper and tantalum contact polishing slurry during chemical mechanical planarization (CMP). In this paper, a kind of chelating agent was proposed to reduce the gc between Cu and Ta by investigating the potential of corrosion, static corrosion rate. Galvanic corrosion potential would be reduced which reveal that chelating agent can reduce the galvanic corrosion.

引用

页数：3

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