Analytical model of the threshold voltage and subthreshold swing of undoped cylindrical gate-all-around-based MOSFETs

被引：108
|
作者：
El Hamid, Hamdy Abd [1 ]
Iniguez, Benjamin
Guitart, Jaume Roig
机构：
[1] Univ Rovira & Virgili, Dept Engn Elect Elect & Automat, Tarragona 43007, Spain
[2] CNRS, Lab Analyse & Architecture Syst, F-31077 Toulouse, France
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2007年 / 54卷 / 03期
关键词：
device modeling; downscaling; drain-induced barrier lowering (DIBL); gate-all-around (GAA); MOSFET; subthreshold swing; threshold voltage;
D O I：
10.1109/TED.2006.890595
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Analytical physically based models for the threshold voltage, subthreshold swing, and drain-induced barrier lowering (DIBL) of undoped cylindrical gate-all-around MOSFETs have been derived based on an analytical solution of 2-D Poisson's equation (in cylindrical coordinates) in which the mobile charge term has been included. Using the new model, threshold voltage, DIBL and subthreshold swing sensitivities to channel length, and channel thickness have been investigated. The models for DIBL, subthreshold swing, and threshold voltage rolloff parameters have been verified by comparison with 3-D numerical simulations; close agreement with the numerical simulations has been observed.
引用
收藏
页码：572 / 579
页数：8
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