Analysis of defects in epitaxial oxide thin films via X-ray diffraction technology

被引:2
作者
Hollmann, E. [1 ]
Woerdenweber, R. [1 ]
机构
[1] Forschungszentrum Julich, Ctr Nanoelect Syst Informat Technol, IBN, D-52425 Julich, Germany
关键词
thin film characterization; oxide films; defects in thin films; X-ray detection;
D O I
10.1016/j.tsf.2006.10.134
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
It is demonstrated that a careful X-ray diffraction analysis represents an effective way to determine imperfections and their density in complex oxide epitaxial thin films. A method for simulating X-ray intensities of the (00l) reflexes is developed and demonstrated for the model system YBa2Cu3O7-delta- In a first step, the delta dependence of the intensities of the different (00l) reflexes is simulated and compared to literature data of perfect YBa2Cu3O7-delta thin film and bulk samples with different oxygen content. In a second step, it is demonstrated that the 6 dependence of the intensities of the different (00l) reflexes depends strongly on the type of defects in case of imperfect YBa2CU307-6. Different types of defects (e.g., cation disorder, cation substitution, Cu deficiency) are discussed. Finally, the method is applied to low-pressure sputtered YBa2CU307-6 thin film. It is shown that according to this analysis and in contrast to previous assumptions, Cu(I) deficiency seems to be responsible for the elongation of the c-axis and the reduction of the superconducting transition temperature. (c) 2006 Elsevier B.V. All rights reserved.
引用
收藏
页码:3530 / 3538
页数:9
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