Molecular dynamics simulation for the sputtering of an Al2O3 sample bombarded with MeV Si ions

Sputtering yield and kinetic energy distribution (KED) of Al particles from an Al2O3 sample bombarded with 1-5 MeV Si ions have been simulated using the molecular dynamics method. These have also been measured experimentally with a conventional time-of-flight facility. In the simulation, a new interatomic potential specific to the Al2O3 target was developed, and both the nuclear energy loss S-n and electronic energy loss S-e were taken into consideration. By carefully adjusting the simulation parameters, the simulated sputtering yields fit well with the experimental results, and the simulated KED of Al particles also fits roughly with the experimental KED after being modified theoretically.