Reply to "Comment on 'Metal Semiconductor Field-Effect Transistor with MoS2/Conducting NiOx van der Waals Schottky Interface for Intrinsic High Mobility and Photoswitching Speed"

被引：1
|
作者：
Kim, Jin Sung [1 ]
Lee, Hee Sung [1 ]
Im, Seongil [1 ]
机构：
[1] Yonsei Univ, Inst Phys & Appl Phys, Seoul 120749, South Korea
来源：
ACS NANO | 2016年 / 10卷 / 02期
关键词：
MOS2; TRANSITION; CRYSTALS;
D O I：
10.1021/acsnano.5b08198
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
引用
收藏
页码：1716 / 1717
页数：2
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