Spectroscopic ellipsometry and morphological studies of nanocrystalline NiO and NiO/ITO thin films deposited by e-beams technique

被引:45
作者
Emam-Ismail, M. [1 ,2 ]
El-Hagary, M. [3 ]
El-Sherif, H. M. [4 ]
El-Naggar, A. M. [1 ,5 ]
El-Nahass, M. M. [6 ]
机构
[1] Ain Shams Univ, Fac Sci, Phys Dept, Thin Films Lab, Cairo 11566, Egypt
[2] Galala Univ, Adv Basic Sci, New Galala City 43511, Suez, Egypt
[3] Helwan Univ, Fac Sci, Phys Dept, Cairo 11792, Egypt
[4] McMaster Univ, Dept Mat Sci & Engn, Hamilton, ON L8S 4L8, Canada
[5] King Saud Univ, Coll Sci, Phys & Astron Dept, Res Chair Exploitat Renewable Energy Applicat Sau, POB 2455, Riyadh 11451, Saudi Arabia
[6] Ain Shams Univ, Fac Educ, Phys Dept, Thin Film Lab, Cairo 11757, Egypt
关键词
Nickel oxide and indium tin oxide thin films; Nanomaterial; Spectroscopic ellipsometry; Single oscillator parameters; And optical band gap; OPTICAL-PROPERTIES; NICKEL-OXIDE; ELECTRONIC-STRUCTURE; AMORPHOUS-SEMICONDUCTORS; DOPED NIO; MICROSTRUCTURE; DISPERSION; THICKNESS; BEHAVIOR;
D O I
10.1016/j.optmat.2020.110763
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The current article reported a new data on the structural, surface morphology and optical properties of multi thickness nanocrystalline NiO/glass substrate and NiO/ITO/glass substrate semiconductor thin films prepared by electron beam deposition technique. Structural investigation shows that the as-deposited multi-thickness NiO films deposited on a glass substrate crystallize in the form of cubic NaCl type structure. However, ITO thin film has a cubic type structure. Besides, the increase in the crystallite size was observed with increasing the thickness of NiO film, this behavior was confirmed by AFM micrographs. In the spectral range 280 nm-1800 nm, the optical properties of the NiO/glass substrate and NiO/ITO/glass substrate thin films have been investigated using spectroscopic ellipsometry (SE) technique. For NiO/glass substrate sample, the SE results providing direct energy Edir g approximate to 3.954 eV, indirect energy Eindir g approximate to 2.855eV and phonon energy of order 200 meV. In addition, the analysis of the refractive index dispersion gives the atomic number density to be Nfij = 2.213x1022cm? 3. On the other hand, for the NiO (410 nm)/ITO (99 nm)/glass substrate thin film sample, a reduction in the direct transition energy to Edir g approximate to 3.24eV and also in the factor Nfij to 1.6x1022cm? 3was observed. Additionally, the values of the oscillator parameters were calculated for NiO/glass substrate and NiO/ITO/glass substrate thin films using the WempleDiDomenico single oscillator model (WDD). Finally, it was found that the values of Urbach energy for NiO/ glass substrate and NiO (410 nm)/ITO (99 nm)/glass substrate are very small relative to the energy gap values which indicates that the region of localized sates is very narrow compared to the width of the energy gap.
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页数:14
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