A novel organosiloxane vapor annealing process for improving elastic modulus of porous low-k films

被引：0

作者：

Kohmura, K ^{[1
]}

Oike, S ^{[1
]}

Murakami, M ^{[1
]}

Tanaka, H ^{[1
]}

Takada, S ^{[1
]}

Seino, Y ^{[1
]}

Kikkawa, T ^{[1
]}

机构：

[1] MIRAI ASET, Tsukuba, Ibaraki, Japan

来源：

MATERIALS, TECHNOLOGY AND RELIABILITY FOR ADVANCED INTERCONNECTS AND LOW-K DIELECTRICS-2004 | 2004年 / 812卷

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A novel organosiloxane-vapor-annealing method has been developed for improving the mechanical strength of porous silica films with a low dielectric constant. Treatment of a porous silica film with 1,3,5,7-tetramethylcyclotetrasiloxane (TMCTS) under atmospheric nitrogen above 350 degreesC significantly enhanced the mechanical strength (i.e., elastic modulus and hardness) of the film. Results of Fourier transform infrared spectroscopy (FT-IR) and thermal desorption spectroscopy (TDS) suggested the formation of cross-linked poly(TMCTS) network on the porous silica internal wall surfaces by the TMCTS treatment. Such TMCTS cross-linked network is thought to enhance the mechanical strength of the low-k film.

引用

页码：85 / 90

页数：6

共 9 条

[1] Microstructure and mechanical properties of surfactant templated nanoporous silica thin films: Effect of methylsilylation [J].