The band gap and Ga-composition grading profiles effect on the performance of 1μm-thin film graded-CIGS solar cell

被引：0
作者：
Belhadji, Youcef [1 ]
机构：
[1] Univ Tiaret, Fac Appl Sci, Elect Engn Dept, Tiaret 14000, Algeria
来源：
2020 6TH IEEE INTERNATIONAL ENERGY CONFERENCE (ENERGYCON) | 2020年
关键词：
CIGS; solar cell; gap grading; thin film; defect; THIN-FILM;
D O I：
暂无
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
The solar cells efficiency depends mainly on the energy of the absorbed photons. This energy is directly related to the crystalline properties of the semiconductor materials used like absorber. So, the absorption can be optimized using new solar cell structures based on thin film materials that absorb more photons. Therefore, using the graded CIGS like thin film materials with: high reduced thickness, optimal gap makes it possible to the solar cell to absorb a wider photon of the incident light spectrum. In the present work, exploiting SCAPS-1D simulator, we analyze the effect of the P-CIGS band gap grading profiles (Ga-composition) on the electrical performances of thin film solar cell. The simulated structure is as 1.0 mu m-graded-CIGS/10nmN-CdS/150nmN-ZnO. We consider also in this study, the effect of defects, light spectrum and doping concentration of the absorber layer. An optimal efficiency of 22.92 % is recorded for a linear grading profile under 600nm incident light spectrum.
引用
收藏
页码：360 / 365
页数：6
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