Recent development of two-dimensional transition metal dichalcogenides and their applications

被引：2193

作者：

Choi, Wonbong ^{[1
]}

Choudhary, Nitin ^{[1
]}

Han, Gang Hee ^{[2
,3
]}

Park, Juhong ^{[1
]}

Akinwande, Deji ^{[4
]}

Lee, Young Hee ^{[2
,3
]}

机构：

[1] Univ North Texas, Dept Mat Sci & Engn Mech & Energy Engn, Denton, TX 76207 USA

[2] Inst Basic Sci, Ctr Integrated Nanostruct Phys, Suwon 16419, South Korea

[3] Sungkyunkwan Univ SKKU, Dept Energy Sci, Suwon 16419, South Korea

[4] Univ Texas Austin, Dept Elect & Comp Engn, Austin, TX 78758 USA

来源：

MATERIALS TODAY | 2017年 / 20卷 / 03期

关键词：

MOS2; THIN-FILM; ATOMIC LAYER DEPOSITION; HIGH-QUALITY MONOLAYER; VAPOR-PHASE GROWTH; BLACK PHOSPHORUS; LARGE-AREA; BORON-NITRIDE; SINGLE-LAYER; WAFER-SCALE; SENSITIVE DETECTION;

D O I：

10.1016/j.mattod.2016.10.002

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Recent advances in atomically thin two-dimensional transition metal dichalcogenides (2D TMDs) have led to a variety of promising technologies for nanoelectronics, photonics, sensing, energy storage, and opto-electronics, to name a few. This article reviews the recent progress in 2D materials beyond graphene and includes mainly transition metal dichalcogenides (TMDs) (e.g. MoS2, WS2, MoSe2, and WSe2). These materials are finding niche applications for next-generation electronics and optoelectronics devices relying on ultimate atomic thicknesses. Albeit several challenges in developing scalable and defect-free TMDs on desired substrates, new growth techniques compatible with traditional and unconventional substrates have been developed to meet the ever-increasing demand of high quality and controllability for practical applications. The fabrication of novel 2D TMDs that exhibit exotic functionalities and fundamentally new chemistry is highlighted. And finally, in parallel with the electronics, the considerable effort devoted to using these materials for energy and sensing applications is discussed in detail.

引用

页码：116 / 130

页数：15

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