Design of a 3-5-GHz ultrawideband bifet mixer using 0.35-μm SiGe bicmos technology

被引：1

作者：

Song Ruifeng ^{[1
]}

Liao Huailin ^{[1
]}

Huang Ru ^{[1
]}

Wang Yangyuan ^{[1
]}

机构：

[1] Peking Univ, Inst Microelect, Beijing 100087, Peoples R China

来源：

MICROWAVE AND OPTICAL TECHNOLOGY LETTERS | 2007年 / 49卷 / 04期

关键词：

bipolar cascode with metal oxide semiconductor field effect; transistor (BiFET); bipolar complementary metal oxide semiconductor (BiCMOS); mixer; ultrawideband (UWB);

D O I：

10.1002/mop.22305

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A fully integrated ultrawideband (UWB) bipolar cascode with metal oxide semiconductor field effect transistor (BiFET) mixer using standard commercial 0.35-mu m silicon gerinanitan bipolar complementary metal oxide semiconductor technology was first proposed and fabricated in this study. This presented BiFET mixer using bipolar junction transistor as the transconductor stage and metal oxide semiconductor field effect transistor as the switch stage to achieve noise power and linearity trade-off. This 3-5-GHz UWB mixer achieves a conversion gain of 4.5 +/- 0.5 dB at the designed band. The mixer core draws a current of 2.5 mA from a supply voltage of 3 V, while consumes chip area of 0.9 X 0.9 mm(2). (c) 2007 Wiley Periodicals, Inc.

引用

页码：965 / 968

页数：4

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