Design of a 3-5-GHz ultrawideband bifet mixer using 0.35-μm SiGe bicmos technology

A fully integrated ultrawideband (UWB) bipolar cascode with metal oxide semiconductor field effect transistor (BiFET) mixer using standard commercial 0.35-mu m silicon gerinanitan bipolar complementary metal oxide semiconductor technology was first proposed and fabricated in this study. This presented BiFET mixer using bipolar junction transistor as the transconductor stage and metal oxide semiconductor field effect transistor as the switch stage to achieve noise power and linearity trade-off. This 3-5-GHz UWB mixer achieves a conversion gain of 4.5 +/- 0.5 dB at the designed band. The mixer core draws a current of 2.5 mA from a supply voltage of 3 V, while consumes chip area of 0.9 X 0.9 mm(2). (c) 2007 Wiley Periodicals, Inc.