A 3-10GHz Low-Noise Amplifier Using Resistive Feedback in SiGe HBT Technology

被引：2
|
作者：
Huang, Yi-wen [1 ]
Zhang, Wan-rong [1 ]
Xie, Hong-yun [1 ]
Shen, Pei [1 ]
Li, Jia [1 ]
Gan, Jun-ning [1 ]
Huang, Lu [1 ]
Hu, Ning [1 ]
机构：
[1] Beijing Univ Technol, Coll Elect Informat & Control Engn, Beijing 100124, Peoples R China
来源：
PROCEEDINGS OF THE INTERNATIONAL CONFERENCE ON COMMUNICATION SOFTWARE AND NETWORKS | 2009年
关键词：
LNA; UWB; SiGe HBT; resistive feedback; DESIGN;
D O I：
10.1109/ICCSN.2009.157
中图分类号：
TP31 [计算机软件];
学科分类号：
081202 ; 0835 ;
摘要：
This paper presents a SiGe HBT low noise amplifier (LNA) using resistive feedback scheme for ultra-wideband (UWB) applications. This amplifier is implemented in 0.35um SiGe process and is unconditionally stable. The simulated results show the LNA has over 21dB gain with less than 1dB variation over 3-10GHz. The matched input and output reflection are all less than -10dB. The noise figure is 4.03dB at 3GHz and increases to 4.85dB at 10GHz, which is good enough for the resistive feedback LNA.
引用
收藏
页码：313 / 315
页数：3
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