Effect of the Oxidizing Atmosphere on the Microstructure and Dielectric Properties of CaCu3Ti4O12 Ceramics

被引：1

作者：

Zhao Xue-Tong ^{[1
]}

Ren Lu-Lu ^{[1
]}

Liao Rui-Jin ^{[1
]}

Li Jian-Ying ^{[2
]}

Wang Fei-Peng ^{[1
]}

机构：

[1] Chongqing Univ, State Key Lab Power Transmiss Equipment & Syst Se, Chongqing 400044, Peoples R China

[2] Xi An Jiao Tong Univ, State Key Lab Elect Insulat & Power Equipment, Xian 710049, Peoples R China

来源：

JOURNAL OF INORGANIC MATERIALS | 2015年 / 30卷 / 12期

基金：

中国国家自然科学基金;

关键词：

CaCu3Ti4O12; ceramics; oxidizing atmosphere; dielectric properties; BEHAVIOR; PERMITTIVITY; CONDUCTION; CONSTANT;

D O I：

10.15541/jim20150184

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

CaCu3Ti4O12 ceramics were synthesized by using the solid-state reaction method, and the roles of heat-treatment in the oxidizing atmosphere on the microstructure and dielectric properties were investigated in this work. It is indicated that after heat-treatment in the oxidizing atmosphere, the dielectric constant is decreased slightly and the dielectric loss tangent is effectively suppressed to 0.03-0.04. In the temperature range of 183-273 K, the dielectric loss is composed of conductance loss and two relaxation loss peaks. It is worth noting that the conductance loss at low frequency is reduced obviously. The result impedance spectra analysis reveals that the grain boundary resistance of CaCu3Ti4O12 ceramics is boosted from 1.8x10(4) Omega to 8.6x10(4) Omega at 393 K. Furthermore, the results from volt-ampere characteristics (J-E) exhibit that the breakdown field and nonlinear coefficient of CaCu3Ti4O12 ceramics are increased from 226 V/mm and 3.52 to 397 V/mm and 4.51, respectively. The barrier height is also increased from 0.56 eV to 0.63 eV.

引用

页码：1303 / 1309

页数：7

共 22 条

[1] Characterization of grain boundary impedances in fine- and coarse-grained CaCu3Ti4O12 ceramics -: art. no. 094124 [J].

Adams, TB ;

Sinclair, DC ;

West, AR .

PHYSICAL REVIEW B, 2006, 73 (09)

[2] Correlation between the trap state spectra and dielectric behavior of CaCu3Ti4O12 [J].

Baerner, K. ;

Luo, X. J. ;

Song, X. P. ;

Hang, C. ;

Chen, S. S. ;

Medvedeva, I. V. ;

Yang, C. P. .

JOURNAL OF MATERIALS RESEARCH, 2011, 26 (01) :36-44

[3] Extrinsic models for the dielectric response of CaCu3Ti4O12 [J].

Cohen, MH ;

Neaton, JB ;

He, LX ;

Vanderbilt, D .

JOURNAL OF APPLIED PHYSICS, 2003, 94 (05) :3299-3306

[4] Evidence for oxygen vacancy inducing spontaneous normal-relaxor transition in complex perovskite ferroelectrics [J].

Deng, GC ;

Li, GR ;

Ding, AL ;

Yin, QR .

APPLIED PHYSICS LETTERS, 2005, 87 (19) :1-3

[5] Effects of Cu stoichiometry on the micro structures, barrier-layer structures, electrical conduction, dielectric responses, and stability of CaCu3Ti4O12 [J].

Fang, Tsang-Tse ;

Mei, Li-Then ;

Ho, Hei-Fong .

ACTA MATERIALIA, 2006, 54 (10) :2867-2875

[6] Origin of Giant Dielectric Permittivity in CaCu3Ti4O12 Ceramics [J].

Hao Wen-Tao ;

Zhang Jia-Liang ;

Tan Yong-Qiang ;

Zheng Peng ;

Wang Chun-Lei .

JOURNAL OF INORGANIC MATERIALS, 2011, 26 (10) :1058-1062

[7] First-principles study of the structure and lattice dielectric response of CaCu3Ti4O12 -: art. no. 214112 [J].

He, LX ;

Neaton, JB ;

Cohen, MH ;

Vanderbilt, D ;

Homes, CC .

PHYSICAL REVIEW B, 2002, 65 (21) :2141121-21411211

[8] Optical response of high-dielectric-constant perovskite-related oxide [J].

Homes, CC ;

Vogt, T ;

Shapiro, SM ;

Wakimoto, S ;

Ramirez, AP .

SCIENCE, 2001, 293 (5530) :673-676

[9] Defects and dc electrical degradation in CaCu3Ti4O12 ceramics: Role of oxygen vacancy migration [J].

Li, Jianying ;

Zhao, Xuetong ;

Gu, Fang ;

Li, Shengtao .

APPLIED PHYSICS LETTERS, 2012, 100 (20)

[10] Structurally frustrated relaxor ferroelectric behavior in CaCu3Ti4O12 -: art. no. 134104 [J].

Liu, Y ;

Withers, RL ;

Wei, XY .

PHYSICAL REVIEW B, 2005, 72 (13)

← 1 2 3 →