High-quality thin-film passivation by catalyzer-enhanced chemical vapor deposition for organic light-emitting diodes

被引：29
作者：
Kim, Han-Ki
Kim, Myung Soo
Kang, Jae-Wook
Kim, Jang-Joo
Yi, Min-Su
机构：
[1] Kumoh Natl Inst Technol, Dept Informat & Nano Mat Engn, KIT, Gumi 730701, Gyeongbuk, South Korea
[2] Samsung SDI Co Ltd, Core Technol Lab, Suwon 442391, Gyeonggi Do, South Korea
[3] Seoul Natl Univ, Sch Mat Sci & Engn, Seoul 151741, South Korea
[4] Seoul Natl Univ, Organ Light Emitting Diodes Ctr, Seoul 151741, South Korea
[5] Sangju Natl Univ, Dept Mat Sci & Engn, Sangju 742711, Gyeonbguk, South Korea
来源：
APPLIED PHYSICS LETTERS | 2007年 / 90卷 / 01期
基金：
新加坡国家研究基金会;
关键词：
D O I：
10.1063/1.2425021
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The thin-film passivation of organic light-emitting diodes (OLEDs) by a SiNx film grown by catalyzer-enhanced chemical vapor deposition was investigated. Using a tungsten catalyzer connected in series, a high-density SiNx passivation layer was deposited on OLEDs and bare polycarbonate (PC) substrates at a substrate temperature of 50 degrees C. Despite the low substrate temperature, the single SiNx passivation layer, grown on the PC substrate, exhibited a low water vapor transmission rate of (2-6)x10(-2) g/m(2)/day and a high transmittance of 87%. In addition, current-voltage-luminescence results of an OLED passivated with a 150-nm-thick SiNx film compared to nonpassivated sample were identical indicating that the performance of an OLED is not critically affected by radiation from tungsten catalyzer during the SiNx deposition. Moreover, the lifetime to half initial luminance of an OLED passivated with the single 150-nm-thick SiNx layer was 2.5 times longer than that of a nonpassivated sample.
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页数：3
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