Activation of parasitic bipolar transistor during reverse recovery of MOSFET's intrinsic diode

被引：4

作者：

Busatto, G ^{[1
]}

Persiano, GV ^{[1
]}

Strollo, AGM ^{[1
]}

Spirito, P ^{[1
]}

机构：

[1] UNIV SALERNO,DEPT INFORMAT & ELECT ENGN,BENEVENTO,ITALY

来源：

MICROELECTRONICS AND RELIABILITY | 1997年 / 37卷 / 10-11期

关键词：

D O I：

10.1016/S0026-2714(97)00096-6

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The activation of the parasitic bipolar transistor during reverse recovery of the internal diode of a power MOSFET used as a fly-back diode in a half-bridge circuit topology is investigated. Experimental observations, obtained by means of a non-destructive tester, and 2D MEDICI simulations indicate that, among the various physical and geometrical parameters of MOSFET elementary cell, the resistance associated to the contact on the source region plays the most relevant role during the activation process. (C) 1997 Elsevier Science Ltd.

引用

页码：1507 / 1510

页数：4

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