Oxygen Concentration Dependence of the Optical and Electrical Properties of Mn-Doped Tin Oxide Thin Films Deposited on a Polyethylene Terephthalate Substrate

被引:0
作者
Cho, Young-Soo [1 ]
Jang, Gun-Eik [1 ]
机构
[1] Chungbuk Natl Univ, Dept Mat Engn, Cheongju 28644, South Korea
关键词
SnO2; Mn (2.59 wt.%)-Doped Tin Oxide; Transparent Electrode; Transmittance; O-2/(Ar+O-2) Ratio; Band Gap; MAGNETIC-PROPERTIES; SNO2; MORPHOLOGY;
D O I
10.1166/jnn.2020.17254
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Mn (2.59 wt.%)-doped tin oxide (MTO) was deposited on a polyethylene terephthalate (PET) substrate using RF magnetron sputtering at room temperature. Oxygen was introduced during the sputtering process to prevent the reduction of transmittance and the formation of nonstoichiometric compositions. The dependence of the optical and electrical properties of MTO thin films on the O-2/(Ar+O-2) ratio was systematically investigated. The transmittance of the MTO single layer (24 nm) at 550 nm gradually increased from 85.9% to 88.2% with an increase of the O-2/(Ar+O-2) ratio from 0% to 7.9%. The optical band gap was also affected by the O-2/(Ar+O-2) ratio, varying from 3.30 to 3.64 eV. The MTO film deposited at an O-2/(Ar+O-2) ratio of 2.7% showed the minimum resistivity (0.03 Omega . cm). The XPS spectra indicated that the SnO2 thin films become almost stoichiometric as the O-2/(Ar+O-2) ratio increased. Thus, this sputtering process can be used to prepare flexible MTO films with a wider optical band gap, improved transmittance, and decreased resistivity.
引用
收藏
页码:505 / 509
页数:5
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