Simple model for the polarization effects in tip-enhanced Raman spectroscopy

被引：79

作者：

Ossikovski, Razvigor ^{[1
]}

Nguyen, Quang ^{[1
]}

Picardi, Gennaro ^{[1
]}

机构：

[1] Ecole Polytech, CNRS, LPICM, F-91128 Palaiseau, France

来源：

PHYSICAL REVIEW B | 2007年 / 75卷 / 04期

关键词：

D O I：

10.1103/PhysRevB.75.045412

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The paper addresses the polarization properties of tip enhanced Raman spectroscopy (TERS) through an experimental study on (001)- and (111)-oriented crystalline Si samples and quantitatively describes them by using a simple phenomenological model. The model, conceptually similar to that used in surface-enhanced Raman scattering (SERS), is based on the introduction of a phenomenological tip-amplification tensor accounting for the interaction of the tip with the electromagnetic field. It was found to be in a good agreement not only with our experimental data but also with the measurements and numerical simulations of other groups.

引用

页数：9

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