A Back-Channel-Etched Amorphous InGaZnO Thin-Film Transistor Technology With Al-Doped ZnO as Source/Drain and Pixel Electrodes

被引：14

作者：

Deng, Wei ^{[1
]}

Xiao, Xiang ^{[2
]}

Shao, Yang ^{[2
]}

Song, Zhen ^{[2
]}

Lee, Chia-Yu ^{[3
]}

Lien, Alan ^{[3
]}

Zhang, Shengdong ^{[1
,2
]}

机构：

[1] Peking Univ, Inst Microelect, Beijing 100871, Peoples R China

[2] Peking Univ, Sch Elect & Comp Engn, Shenzhen 518055, Peoples R China

[3] Shenzhen China Star Optoelect Technol Co Ltd, Shenzhen 518107, Peoples R China

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2016年 / 63卷 / 05期

基金：

中国国家自然科学基金;

关键词：

Aluminum-doped ZnO (AZO); amorphous indium-gallium-zinc oxide (a-IGZO); back-channel-etch (BCE); pixel electrode (PE); thin-film transistor (TFT); wet etch; THRESHOLD VOLTAGE; PERFORMANCE; DAMAGE; TFTS; SIO2;

D O I：

10.1109/TED.2016.2542862

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A back-channel-etched fabrication process for amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors is proposed, in which an alumium-doped ZnO (AZO) transparent conductive film is used to form both source/drain and pixel electrodes. It is demonstrated that rinsed acetic acid solution has a high etching selectivity over 100:1 between AZO and a-IGZO. In addition, bus and interconnect lines are formed in a separate fabrication step in this process, so that the Cu process could be adopted without bringing contamination issue.

引用

页码：2205 / 2209

页数：5

共 28 条

[1] AZO thin film-based UV sensors: effects of RF power on the films [J].

Akin, Nihan ;

Baskose, U. Ceren ;

Kinaci, Baris ;

Cakmak, Mehmet ;

Ozcelik, Suleyman .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2015, 119 (03) :965-970

[2]

Arai T., 2012, SID INT S, V43, P756

[3] Present status of amorphous In-Ga-Zn-O thin-film transistors [J].

Kamiya, Toshio ;

Nomura, Kenji ;

Hosono, Hideo .

SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS, 2010, 11 (04)

[4] Self-Aligned Coplanar a-IGZO TFTs and Application to High-Speed Circuits [J].

Kang, Dong Han ;

Kang, In ;

Ryu, Sang Hyun ;

Jang, Jin .

IEEE ELECTRON DEVICE LETTERS, 2011, 32 (10) :1385-1387

[5] Amorphous gallium indium zinc oxide thin film transistors: Sensitive to oxygen molecules [J].

Kang, Donghun ;

Lim, Hyuck ;

Kim, Changjung ;

Song, Ihun ;

Park, Jaechoel ;

Park, Youngsoo ;

Chung, JaeGwan .

APPLIED PHYSICS LETTERS, 2007, 90 (19)

[6] PERFORMANCE OF THIN HYDROGENATED AMORPHOUS-SILICON THIN-FILM TRANSISTORS [J].

KANICKI, J ;

LIBSCH, FR ;

GRIFFITH, J ;

POLASTRE, R .

JOURNAL OF APPLIED PHYSICS, 1991, 69 (04) :2339-2345

[7] The Impact of Device Configuration on the Photon-Enhanced Negative Bias Thermal Instability of GaInZnO Thin Film Transistors [J].

Kwon, Jang-Yeon ;

Son, Kyoung Seok ;

Jung, Ji Sim ;

Lee, Kwang-Hee ;

Park, Joon Seok ;

Kim, Tae Sang ;

Ji, Kwang Hwan ;

Choi, Rino ;

Jeong, Jae Kyeong ;

Koo, Bonwon ;

Lee, Sangyun .

ELECTROCHEMICAL AND SOLID STATE LETTERS, 2010, 13 (06) :II213-II215

[8] A novel self-aligned etch-stopper structure with lower photo leakage for AMLCD and sensor applications [J].

Liang, Chung-Yu ;

Gan, Feng-Yuan ;

Liu, Po-Tsun ;

Yeh, F. S. ;

Chen, Stephen Hsin-Li ;

Chang, Ting-Chang .

IEEE ELECTRON DEVICE LETTERS, 2006, 27 (12) :978-980

[9] Damage-Free Back Channel Wet-Etch Process in Amorphous Indium-Zinc-Oxide Thin-Film Transistors Using a Carbon-Nanofilm Barrier Layer [J].

Luo, Dongxiang ;

Zhao, Mingjie ;

Xu, Miao ;

Li, Min ;

Chen, Zikai ;

Wang, Lang ;

Zou, Jianhua ;

Tao, Hong ;

Wang, Lei ;

Peng, Junbiao .

ACS APPLIED MATERIALS & INTERFACES, 2014, 6 (14) :11318-11325

[10] Effects of Etching Residue on Positive Shift of Threshold Voltage in Amorphous Indium-Zinc-Oxide Thin-Film Transistors Based on Back-Channel-Etch Structure [J].

Luo, Dongxiang ;

Xu, Hua ;

Li, Min ;

Tao, Hong ;

Wang, Lei ;

Peng, Junbiao ;

Xu, Miao .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2014, 61 (01) :92-97

← 1 2 3 →