Disparate structural changes in the titanium dioxide thin film coated on the p-type Si and porous silicon textures after gamma irradiation

被引：2

作者：

Pandaram, P. ^{[1
]}

Jashi, K. B. ^{[1
]}

Sathish, A. V. ^{[1
]}

Saranya, A. ^{[2
]}

Jothi, S. ^{[3
]}

Lawrence, B. ^{[3
]}

Prithivikumaran, N. ^{[3
]}

Jeyakumaran, N. ^{[3
]}

机构：

[1] Kudankulam Nucl Power Project, Tirunelveli 627106, Tamil Nadu, India

[2] Vel Tech Rangarajan Dr Sagunthala R&D Inst Sci &, Chennai 600062, Tamil Nadu, India

[3] VHN Senthikumara Nadar Coll Autonomous, Virudunagar 626001, Tamil Nadu, India

来源：

MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS | 2021年 / 267卷

关键词：

Silicon; Porous silicon; Titanium dioxide; Thin film; Hetero-junction; Gamma irradiation; Structural changes; PHOTOCATALYTIC ACTIVITY; OPTICAL-PROPERTIES; TIO2; RADIATION; ANATASE; RUTILE;

D O I：

10.1016/j.mseb.2021.115089

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Gamma irradiation effects on the thin film of titanium dioxide (TiO2) coated on p-type silicon (Si) and porous silicon (PSi) by sol-gel spin coating technique is investigated for the gamma dose of 100 to 1000 mGy. Characterization studies by the X-Ray Diffraction, Fourier Transform Infrared and Photoluminescence spectroscopy, and I-V study revealed the measurable changes in structural, optical and electrical properties due to gamma irradiation which are disparate in the hetero-junction on silicon and porous silicon texture. The anatase phase of TiO2 experienced linear defects then the rutile phase structure. Band gap energy is decreased while the dielectric constant is increased with increase of gamma dose. The strain due to crystallization of sol-gel of TiO2 on Si substrate is higher than the PSi substrate and found to be changed after irradiation. Porous texture is found to be suitable for formation of larger crystallite with less strain which can provide mechanical stability.

引用

页数：16