RETRACTED: Illumination response on the electrical characterizations of Cr/n-GaAs/In photodiode (Retracted article. See vol. 127, pg. 3095, 2016)

被引：2

作者：

Orak, I. ^{[1
,2
]}

Korkut, H. ^{[3
]}

Yildirim, N. ^{[2
]}

Turut, A. ^{[4
]}

机构：

[1] Bingol Univ, Vocat Sch Hlth Serv, TR-12000 Bingol, Turkey

[2] Bingol Univ, Fac Sci & Arts, Dept Phys, TR-12000 Bingo, Turkey

[3] Sinop Univ, Dept Nucl Energy Engn, Fac Engn, TR-57000 Sinop, Turkey

[4] Istanbul Medeniyet Univ, Dept Engn Phys, Fac Sci, TR-34730 Istanbul, Turkey

来源：

OPTIK | 2015年 / 126卷 / 24期

关键词：

Illumination respond; Photovoltaic impact; Ideality factor; Open circuit voltage; Short circuit current; SCHOTTKY DIODES; PHOTOVOLTAIC PROPERTIES; BARRIER HEIGHT; SOLAR-CELLS; HETEROJUNCTION; INTERFACE; FILMS; INP;

D O I：

10.1016/j.ijleo.2015.09.225

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

In this study, we were investigated current-voltage (I-V) measurements of Cr/n type-GaAs photodiode and performed under dark, room light and illumination conditions at room temperature. The ideality factor (n) and barrier height (phi(beta)) values of the device was calculated to be 1.1 and 0.91 eV, respectively. The photovoltaic parameters, such as short circuit current (I-sc) and open circuit voltage (V-oc) were acquired as 280 mV, 0.18 mu A and 460 mV, 13.1 mu A room light and under 30 mW/cm(2) light intensity, respectively. The obtained results recommend that Grin-GaAs diode can be used as a photodevice in optoelectronic and photovoltaic applications. The device under light illumination shows a good photovoltaic behavior. (C) 2015 Elsevier GmbH. All rights reserved.

引用

页码：4946 / 4948

页数：3

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