Low-temperature sintering-microwave dielectric property relations in Ba3(VO4)2 ceramic

被引:111
作者
Umemura, Ryosuke
Ogawa, Hirotaka
Yokoi, Atsushi
Ohsato, Hitoshi
Kan, Akinori
机构
[1] Meijo Univ, Fac Sci & Technol, Tempaku Ku, Nagoya, Aichi 4688502, Japan
[2] Nagoya Inst Technol, Shikumi Coll, Showa Ku, Nagoya, Aichi 4668555, Japan
关键词
Ba-3(VO4)(2); LTCC; B2O3; microwave dielectric property;
D O I
10.1016/j.jallcom.2006.01.017
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The Ba-3(VO4)(2)-xwt.%B2O3 (x = 0-5) ceramics were prepared by the solid state reaction method in order to reduce the sintering temperature. The saturated bulk densities of Ba-3(VO4)(2)-xwt.%B2O3 ceramics were shifted toward lower sintering temperatures with increased the amounts of B2O3 doping, and then an improvement in the quality factor (Q.f.) of the samples was recognized at the lower sintering temperatures. As a result, the Q-f value of 41,065 GH, the epsilon(r) of 12.5 and the tau(f) value of 38.8 ppm/degrees C were obtained in the sample of the Ba-3(VO4)(2)-0.5 wt.%B2O3 ceramic sintered at the temperature of 950 degrees C. However, the Q.f values of the sample with B2O3 higher than that of 3 wt.% additions decreased because of the formation of secondary phase and abnormal grain growth of the sample. As for the chemical compatibility with silver, no secondary phase was detected in the XRPD pattern when the mixtures of Ba-3(VO4)(2)-1 wt.%B(2)o(3) ceramics and Ag powders were heat-treated at 900 degrees C for 1 h in air. (c) 2006 Elsevier B.V. All rights reserved.
引用
收藏
页码:388 / 393
页数:6
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