Interdiffusion of In and Ga in InGaN quantum wells

被引：79

作者：

McCluskey, MD

Romano, LT

Krusor, BS

Johnson, NM

Suski, T

Jun, J

机构：

[1] Xerox Corp, Palo Alto Res Ctr, Palo Alto, CA 94304 USA

[2] Unipress, PL-01142 Warsaw, Poland

来源：

APPLIED PHYSICS LETTERS | 1998年 / 73卷 / 09期

关键词：

D O I：

10.1063/1.122149

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Interdiffusion of In and Ga is observed in InGaN/GaN multiple quantum wells for annealing temperatures of 1300-1400 degrees C. Hydrostatic pressures of up to 15 kbar were applied to prevent surface decomposition. In as-grown material, x-ray diffraction spectra show InGaN diffraction peaks up to the fourth order. After annealing at 1400 degrees C for 15 min, only the zero-order peak is observed, as a result of compositional disordering of the quantum well superlattice. Transmission electron microscopy confirms that the superlattice is completely disordered after annealing at 1400 degrees C for 15 min. (C) 1998 American Institute of Physics. [S0003-6951(98)04635-X].

引用

页码：1281 / 1283

页数：3

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