Thermally reduced solution-processed graphene oxide thin film: An efficient infrared photodetector

被引：27

作者：

Chowdhury, Farzana A. ^{[1
]}

Mochida, Tomoaki ^{[2
]}

Otsuki, Joe ^{[2
]}

Alam, M. Sahabul ^{[3
]}

机构：

[1] Atom Energy Ctr, Expt Phys Div, Dhaka 1000, Bangladesh

[2] Nihon Univ, Coll Sci & Technol, Chiyoda Ku, Tokyo 1018308, Japan

[3] Univ Dhaka, Dept Phys, Fac Sci, Dhaka 1000, Bangladesh

来源：

CHEMICAL PHYSICS LETTERS | 2014年 / 593卷

关键词：

OPTOELECTRONIC PROPERTIES;

D O I：

10.1016/j.cplett.2014.01.012

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

A sharp response of infrared light detecting capability is observed in reduced graphene oxide based photodetector. The photoresponse increased with increasing solution concentration and annealing duration, at a low percolation. The photocurrent increases considerably before saturation and persists for a maximum time of 26 min. This Letter also reports on superiority of device performance with continuous annealing over annealing with an interval. A maximum photoresponsivity of 0.55 A/W and external quantum efficiency of 57% was achieved at low power light intensity (0.8 mW/cm(2)). This Letter presents an efficient graphene oxide thin film infrared photodetector processed via a modified synthesis protocol. (C) 2014 Elsevier B. V. All rights reserved.

引用

页码：198 / 203

页数：6

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