Controlled Synthesis of High-Quality Mono layered α-In2Se3 via Physical Vapor Deposition

In this work, we have demonstrated the synthesis of high-quality monolayered alpha-In2Se3 using physical vapor deposition method under atmospheric pressure. The quality of the In2Se3 atomic layers has been confirmed by complementary characterization technologies such as Raman/photoluminescence spectroscopies and atomic force microscope. The atomically resolved images have been obtained by the annular dark-field scanning transmission electron microscope. The field-effect transistors have been fabricated using the atomically layered In2Se3 and exhibit ptype semiconducting behaviors with the mobility up to 2.5 cm(2)/Vs. The In2Se3 layers also show a good photoresponsivity of 340A/ W, as well as 6 ms response time for the rise and 12 ms for the fall. These results make In2Se3 atomic layers a promising candidate for the optoelectronic and photosensitive device applications.