Coupling between magnetic and optical properties of GaN:TM (TM: V, Cr, Mn, Fe, Co, Ni): First-principle study with LDA-SIC approximation

被引:16
作者
Salmani, El Mehdi [1 ]
Mounkachi, Omar [2 ,3 ,4 ]
Ez-Zahraouy, Hamid [1 ]
Benyoussef, Abdelilah [1 ,2 ]
Hamedoun, Mohammed [2 ]
Hlil, El Kebir [3 ,4 ]
机构
[1] Univ Mohammed V Agdal, LMPHE URAC 12, Dept Phys, Fac Sci, Rabat, Morocco
[2] MASciR, Inst Nanomat & Nanotechnol, Rabat, Morocco
[3] CNRS, Inst Neel, F-38042 Grenoble 9, France
[4] Univ Grenoble 1, F-38042 Grenoble 9, France
关键词
DOPED ZNO; FERROMAGNETISM; SEMICONDUCTORS; (GA;
D O I
10.1016/j.cplett.2013.09.059
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Electronic structure, magnetic and optical properties of GaN:TM (TM: V, Cr, Mn, Fe, Co, Ni), based dilute magnetic semiconductors (DMS), are investigated using first-principles calculations. The energy difference between the ferromagnetic and disorder local moment states has been evaluated. Moreover, the optical absorption spectra obtained by ab-initio calculations confirm the ferromagnetic stability based on the charge state of magnetic impurities. Our results show that the ferromagnetic state is stable when TM introduce simultaneously magnetic moment and intrinsic carriers in (Ga, TM)N. Some studied ferromagnetic DMS exhibit half-metallic behavior, which is suitable for spintronics applications. (C) 2013 Elsevier B.V. All rights reserved.
引用
收藏
页码:242 / 246
页数:5
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