Anomalous and spin Hall effects in a magnetic tunnel junction with Rashba spin-orbit coupling

被引：33

作者：

Vedyayev, A. V. ^{[1
]}

Titova, M. S. ^{[1
]}

Ryzhanova, N. V. ^{[1
]}

Zhuravlev, M. Ye. ^{[2
,3
,4
,5
]}

Tsymbal, E. Y. ^{[3
,4
]}

机构：

[1] Moscow MV Lomonosov State Univ, Dept Phys, Moscow 119899, Russia

[2] Russian Acad Sci, Kurnakov Inst Gen & Inorgan Chem, Moscow 119991, Russia

[3] Univ Nebraska, Dept Phys & Astron, Lincoln, NE 68588 USA

[4] Univ Nebraska, Nebraska Ctr Mat & Nanosci, Lincoln, NE 68588 USA

[5] St Petersburg State Univ, Fac Liberal Arts & Sci, St Petersburg 190000, Russia

来源：

APPLIED PHYSICS LETTERS | 2013年 / 103卷 / 03期

基金：

美国国家科学基金会;

关键词：

MAGNETORESISTANCE; PLANE;

D O I：

10.1063/1.4815866

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Anomalous and spin Hall effects are investigated theoretically for a magnetic tunnel junction where the applied voltage produces a Rashba spin-orbit coupling within the tunneling barrier layer. The ferromagnetic electrodes are the source of the spin-polarized current. The tunneling electrons experience a spin-orbit coupling inside the barrier due to the applied electrical field. Charge and spin Hall currents are calculated as functions of the position inside the barrier and the angle between the magnetizations of the electrodes. We find that both charge and spin Hall currents are located inside the barrier near the interfaces. The dependence of the currents on magnetic configuration of the magnetic tunnel junction makes possible the manipulation by the Hall currents via rotation of the magnetization of the electrodes. (C) 2013 AIP Publishing LLC.

引用

页数：5

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