Study of silicon PIN diode responses to low energy gamma-rays

被引:8
作者
Lee, S. C. [1 ]
Jeon, H. B. [1 ]
Kang, K. H. [1 ]
Park, H. [1 ]
机构
[1] Kyungpook Natl Univ, Dept Phys, Daegu 41566, South Korea
基金
新加坡国家研究基金会;
关键词
Low energy gamma-ray; Silicon PIN diode; Energy resolution; Signal-to-noise ratio; Detection speed; PERFORMANCE; DETECTORS;
D O I
10.3938/jkps.69.1587
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Low energy gamma-ray detectors play an important role in diagnosis in nuclear medicine, in detection of gamma-ray bursts for gravitational wave research and in detection of underground nuclear tests. The silicon positive-intrinsic-negative (PIN) diode detector is useful for detection of low energy gamma radiation without using a scintillator because it generates a high signal in a small active volume, has a fast response time and has good intrinsic energy resolution. We measured the detector responses, energy resolutions and signal-to-noise ratios for various gamma energies by using manufactured silicon PIN diode and photodiodes. Radioactive gamma sources, Am-241, Ba-133, and Co-57, providing gamma-rays with energies between 14.4 keV and 136.5 keV are used for the measurements. The energy resolution and the signal-to-noise ratio for 14.4 keV gamma-ray are measured to be 17.1 % and 12.8 for a 500 mu m thick silicon diode. The energy resolutions measured at the FWHM for 59.5 keV and 122.1 keV gamma-rays by using the silicon diode are better by up to two times compared to those obtained using the NaI:Tl or the BGO scintillator with a photomultiplier tube. The dependence of detection speeds of the signals on the diode's thickness is also measured.
引用
收藏
页码:1587 / 1590
页数:4
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