Formation of amorphous layers by solid-state reaction from thin Ir films on Si(100)

被引:21
作者
Demuth, V
Strunk, HP
Wörle, D
Kumpf, C
Burkel, E
Schulz, M
机构
[1] Univ Erlangen Nurnberg, Lehrstuhl Mikrocharakterisierung, D-91058 Erlangen, Germany
[2] Univ Erlangen Nurnberg, Inst Angew Phys, D-91058 Erlangen, Germany
来源
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1999年 / 68卷 / 04期
关键词
D O I
10.1007/s003390050922
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The initial stages of thin Ir film/Si(100) reaction are studied by means of grazing incidence X-ray reflection and transmission electron microscopy. We observe amorphous layers between the Ir film and the Si(100) substrate already to be present after deposition at high vacuum and at ultra-high vacuum conditions. At room temperature an amorphous interlayer forms with an thickness of about 2 nm. Deposition at 400 degrees C results in an 8-nm-thick amorphous layer in which crystallites are present. The formation of the amorphous phase can be explained by calculating the reduction of free energy when an amorphous mixture of Ir and Si atoms is formed. To investigate intermixing of Si and Ir atoms, we use impurities as markers and conclude that during room-temperature-deposition Ir atoms move into the Si(100) substrate. During annealing of room-temperature-deposited samples at 500 degrees C, Si outdiffusion is predominant.
引用
收藏
页码:451 / 455
页数:5
相关论文
共 34 条
[1]  
ANG WH, 1994, J APPL PHYS, V76, P1578
[2]   POLYCRYSTALLINE INTERLAYER FORMED BY DEPOSITION OF THIN-FILM IRIDIUM ON SILICON [J].
BALLESTEROS, C ;
RODRIGUEZ, T ;
JIMENEZLEUBE, J ;
CLEMENT, M .
JOURNAL OF APPLIED PHYSICS, 1995, 77 (10) :5173-5175
[3]  
BARIN I, 1989, THERMODYNAMICAL DATA
[4]   A KINETIC-MODEL FOR SOLID-STATE SILICIDE NUCLEATION [J].
BENE, RW .
JOURNAL OF APPLIED PHYSICS, 1987, 61 (05) :1826-1833
[5]  
CABANSKI W, 1996, P SPIE, V2748
[6]   GROWTH-KINETICS OF AMORPHOUS INTERLAYERS BY SOLID-STATE DIFFUSION IN POLYCRYSTALLINE-ZR AND POLYCRYSTALLINE-HF THIN-FILMS ON (111)SI [J].
CHENG, JY ;
CHEN, LJ .
JOURNAL OF APPLIED PHYSICS, 1990, 68 (08) :4002-4007
[7]   GROWTH-KINETICS OF AMORPHOUS INTERLAYERS BY SOLID-STATE DIFFUSION IN ULTRAHIGH-VACUUM DEPOSITED POLYCRYSTALLINE NB AND TA THIN-FILMS ON (111)SI [J].
CHENG, JY ;
CHEN, LJ .
JOURNAL OF APPLIED PHYSICS, 1991, 69 (04) :2161-2168
[8]   INFRARED PHOTOEMISSION OF HOLES FROM ULTRATHIN (3-20 NM) PT/IR-COMPOUND SILICIDE FILMS INTO SILICON [J].
CZERNIK, A ;
PALM, H ;
CABANSKI, W ;
SCHULZ, M ;
SUCKOW, U .
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1992, 55 (02) :180-191
[9]  
de Boer F.R., 1988, COHESION METALS TRAN
[10]  
DHeurle FM, 1996, MATER RES SOC SYMP P, V402, P3